- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vgs th - Gate-Source Threshold Voltage :
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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,417
In-stock
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Fairchild Semiconductor | MOSFET N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 35 A | 11.7 mOhms | 1 V | 37 nC | Enhancement | PowerTrench | |||
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4,453
In-stock
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Fairchild Semiconductor | MOSFET N-Chan PowerTrench MOSFET 80V, 22A | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 22 A | 11.7 mOhms | PowerTrench | ||||||
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2,497
In-stock
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Fairchild Semiconductor | MOSFET 80V N-Channel PowerTrench MOSFET | SMD/SMT | Power-33-8 | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 22 A | 11.7 mOhms | 24 nC, 29 nC | ||||||||
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5,352
In-stock
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Infineon Technologies | MOSFET 1 P-CH -30V HEXFET 14.6mOhms 16nC | 25 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 11.7 mOhms | - 1.8 V | 16 nC | Enhancement | ||||
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815
In-stock
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IR / Infineon | MOSFET MOSFET N-CH 150V 86A D2PAK | 30 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 86 A | 11.7 mOhms | 3 V | 71 nC | Enhancement | ||||
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1,212
In-stock
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Infineon Technologies | MOSFET 20V 1 N-CH HEXFET 11.7mOhms 14nC | 12 V | SMD/SMT | PQFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 22 A | 11.7 mOhms | 0.5 V to 1.1 V | 14 nC | Enhancement | ||||
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13
In-stock
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IR / Infineon | MOSFET MOSFT 20V 8.5A 11.7mOhm 2.5V cpbl | 12 V | SMD/SMT | PQFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 10 A | 11.7 mOhms | 14 nC | Enhancement |
