- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
24 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,206
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Ch C-FET (FRFET) | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 15 A | 480 mOhms | Enhancement | QFET | |||||
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740
In-stock
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STMicroelectronics | MOSFET N-Ch 500 Volt 10 Amp Zener SuperMESH | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 10 A | 480 mOhms | 49 nC | Enhancement | |||||
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895
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 0.43 Ohm 9A MDmesh M5 MOS | SMD/SMT | TO-252-3 | Reel | Si | N-Channel | 650 V | 9 A | 480 mOhms | |||||||||||
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152,000
In-stock
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Infineon Technologies | MOSFET 20V -100V P-CH FET 480mOhms 18nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 6.5 A | 480 mOhms | 18 nC | Enhancement | |||||
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438
In-stock
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Fairchild Semiconductor | MOSFET P-CH/250V/6A/0.62OHM, Y-formed lead | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 250 V | - 6 A | 480 mOhms | - 5 V | 29 nC | Enhancement | QFET | |||
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591
In-stock
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Fairchild Semiconductor | MOSFET 500V CFET | TO-3PN-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 13.5 A | 480 mOhms | QFET | ||||||||||
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899
In-stock
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Infineon Technologies | MOSFET PLANAR_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 6.8 A | 480 mOhms | 18 nC | Enhancement | |||||
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472
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 0.43 Ohm MDmesh M5 710 VDSS | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 9 A | 480 mOhms | ||||||||||
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147
In-stock
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IXYS | MOSFET LINEAR L2 SERIES MOSFET 500V 15A | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 500 V | 15 A | 480 mOhms | 4.5 V | 123 nC | Enhancement | Linear L2 | ||||
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86
In-stock
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IXYS | MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 15 A | 480 mOhms | 2.5 V | 123 nC | Enhancement | LinearL2 | |||
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20
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Si | N-Channel | 1200 V | 27 A | 480 mOhms | 4 V | 300 nC | Enhancement | POWER MOS 8 | |||||
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5
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 1200 V | 27 A | 480 mOhms | 4 V | 300 nC | Enhancement | POWER MOS 8 | ||||
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372
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 13 A | 480 mOhms | Enhancement | ||||||
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42,700
In-stock
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onsemi | MOSFET 500V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 13 A | 480 mOhms | Enhancement | ||||||
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2,931
In-stock
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Infineon Technologies | MOSFET 20V -100V P-CH FET 480mOhms 18nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 6.6 A | 480 mOhms | - 4 V | 18 nC | Enhancement | ||||
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30,000
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -6.5A 480mOhm 18nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 100 V | - 6.5 A | 480 mOhms | 18 nC | ||||||||
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VIEW | Toshiba | MOSFET N-Ch MOS 12.5A 550V 45W 1800pF 0.48 | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 550 V | 13.5 A | 480 mOhms | |||||||||||
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3
In-stock
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IXYS | MOSFET LINEAR L2 SERIES MOSFET 500V 15A | Through Hole | TO-247-3 | Tube | Si | N-Channel | 500 V | 15 A | 480 mOhms | |||||||||||
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2,500
In-stock
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STMicroelectronics | MOSFET N-Channel 650V Power MDmesh | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 9 A | 480 mOhms | Enhancement | ||||||
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927
In-stock
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STMicroelectronics | MOSFET N Ch 600V 0.35 Ohm Zener SuperMESH 10A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 11 A | 480 mOhms | 47 nC | Enhancement | |||||
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VIEW | STMicroelectronics | MOSFET N-Ch 650V 0.43 Ohm 9A MDmeshV 710V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 9 A | 480 mOhms | ||||||||||
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997
In-stock
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STMicroelectronics | MOSFET N-Channel 650V Power MDmesh | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 9 A | 480 mOhms | Enhancement | ||||||
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858
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 0.43 Ohm 9A MDmeshM5 710V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 650 V | 9 A | 480 mOhms | ||||||||||
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30,000
In-stock
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IR / Infineon | MOSFET MOSFT P-Ch -100V -6.5A 480mOhm 18nC | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | P-Channel | - 100 V | - 6.5 A | 480 mOhms | 18 nC |
