- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,663
In-stock
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Fairchild Semiconductor | MOSFET PT5 150/25V PchMOSFET | 25 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 99 mOhms | - 2.8 V | 22 nC | PowerTrench Power Clip | ||||
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508
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 38A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 37.9 A | 99 mOhms | 119 nC | CoolMOS | |||||
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1,063
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 31.2A D2PAK-2 CoolMOS CFD2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 31.2 A | 99 mOhms | 3.5 V | 118 nC | Enhancement | CoolMOS | |||
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10,630
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 99.6A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 31.2 A | 99 mOhms | 3.5 V | 118 nC | Enhancement | CoolMOS | |||
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GET PRICE |
3,500
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 31.2A TO247-3 CoolMOS CFD2 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 31.2 A | 99 mOhms | 3.5 V | 118 nC | Enhancement | CoolMOS | ||
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316
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 31.2A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 31.2 A | 99 mOhms | 3.5 V | 118 nC | Enhancement | CoolMOS | |||
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2,200
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 31.2A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 31.2 A | 99 mOhms | 3.5 V | 118 nC | Enhancement | CoolMOS | |||
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70
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 99.6A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 31.2 A | 99 mOhms | 3.5 V | 118 nC | Enhancement | CoolMOS | |||
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113
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 31A TO220-3 CoolMOS CPA | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 31 A | 99 mOhms | Enhancement | CoolMOS | |||||
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974
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 100Vdss 20Vgss | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8.5 A | 99 mOhms | 1 V | 14.9 nC | Enhancement | ||||
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210
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 31.2A TO247-3 CoolMOS CFD2 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 31.2 A | 99 mOhms | 3.5 V | 118 nC | Enhancement | CoolMOS | |||
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16
In-stock
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Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 600 V | 38 A | 99 mOhms | 3 V | 112 nC | Enhancement | |||||
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750
In-stock
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Texas instruments | MOSFET Dual N-Channel NexFET Pwr MOSFET | 10 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 5 A | 99 mOhms | 600 mV | 5.4 nC | NexFET | ||||
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6,000
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC | SMD/SMT | PowerDI3333-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 4.2 A | 99 mOhms | 25.2 nC | Enhancement | PowerDI | |||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 700V 31.2A D2PAK-2 CoolMOS CFD2 | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 31.2 A | 99 mOhms | 3.5 V | 118 nC | Enhancement | CoolMOS | |||
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2,957
In-stock
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onsemi | MOSFET NCH 1.8V Power MOSFE | 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 5.5 A | 99 mOhms | 400 mV | 5.1 nC | Enhancement |
