- Mounting Style :
- Maximum Operating Temperature :
- Packaging :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Package :
- Applied Filters :
21 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Qualification | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Rise Time | Package | Factory Pack Quantity | RoHS | Minimum Operating | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GET PRICE |
8,650
In-stock
|
STMicroelectronics | MOSFET Automotive-grade N-channel 100 V, 0.008 Ohm typ 16 A STripF... | - 20 V, + 20 V | Tape & Reel (TR) | AEC-Q101 | 1 Channel | 5 W | N-Channel | 100 V | 16 A | 9.5 mOhms | 2.5 V | 45 nC | 32 ns | PowerFLAT-5x6-8 | 3000 | Green available | |||||||||||
|
GET PRICE |
30,000
In-stock
|
onsemi | MOSFET MV8 P INITIAL PROGRAM | - 20 V, + 20 V | Tape & Reel (TR) | AEC-Q101 | 1 Channel | 75 W | P-Channel | 40 V | 64 A | 9.5 mOhms | 2.4 V | 34.6 nC | WDFN-8 | 3000 | Green available | - 55 C + 175 C | |||||||||||
|
4,425
In-stock
|
Fairchild Semiconductor | MOSFET SO-8 SGL N-CH 30V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12.5 A | 9.5 mOhms | Enhancement | PowerTrench | |||||||||||||
|
827
In-stock
|
Fairchild Semiconductor | MOSFET PT5 150V/20V Nch PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 45 A | 9.5 mOhms | 2 V | 45 nC | Enhancement | PowerTrench Power Clip | |||||||||||
|
2,900
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel PwrTrench 30V 21A 9.5mOhm | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 13.5 A | 9.5 mOhms | PowerTrench | |||||||||||||||
|
2,113
In-stock
|
Fairchild Semiconductor | MOSFET N-Chan, 30/20V PowerTrench | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16 A | 9.5 mOhms | Enhancement | PowerTrench | |||||||||||||
|
1,962
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9.5mOhms 9.6nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 56 A | 9.5 mOhms | 1.35 V to 2.35 V | 9.6 nC | Enhancement | ||||||||||||
|
2,245
In-stock
|
onsemi | MOSFET NFET DPAK 40V 51A 9.5MOHM | SMD/SMT | TO-252-3 | Reel | Si | N-Channel | 40 V | 51 A | 9.5 mOhms | |||||||||||||||||||
|
3,000
In-stock
|
Diodes Incorporated | MOSFET P-Ch Enh Mode FET Vdss -30V 25Vgss | 25 V | SMD/SMT | U-DFN2523-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 10.2 A | 9.5 mOhms | - 1 V | 42.7 nC | Enhancement | ||||||||||||
|
1,969
In-stock
|
IR / Infineon | MOSFET MOSFT 30V 13.6A 9.1mOhm 9.3nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 13.6 A | 9.5 mOhms | 1 V | 9.3 nC | |||||||||||||
|
141
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 9.5 mOhms | 4.5 V | 45 nC | Enhancement | ||||||||||||
|
1,500
In-stock
|
Diodes Incorporated | MOSFET MOSFET N-CHANNEL | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12.7 A | 9.5 mOhms | 43 nC | ||||||||||||||
|
1,107
In-stock
|
STMicroelectronics | MOSFET N-Ch 75 Volt 80 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 9.5 mOhms | Enhancement | ||||||||||||||
|
2,886
In-stock
|
Texas instruments | MOSFET N-Ch NexFET Power MOSFETs | 16 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 9.5 mOhms | 2 V | 4 nC | Enhancement | NexFET | |||||||||||
|
435
In-stock
|
Toshiba | MOSFET N-Ch PWR FET 75A 103W 100V VDSS | 10 V | Through Hole | TO-220-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 75 A | 9.5 mOhms | |||||||||||||||||
|
VIEW | STMicroelectronics | MOSFET N-Ch 30 Volt 70 Amp | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 70 A | 9.5 mOhms | Enhancement | ||||||||||||||
|
1,584
In-stock
|
IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 59 A | 9.5 mOhms | Enhancement | ||||||||||||||
|
VIEW | STMicroelectronics | MOSFET N-Ch Clamped 9.5 ohm 70 A DPAK SAFeFET | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 33 V | 70 A | 9.5 mOhms | 3 V | 32 nC | |||||||||||||||
|
VIEW | Toshiba | MOSFET P-ch -40V -40A SOP-Adv | SMD/SMT | SOP-8 | Reel | 1 Channel | Si | P-Channel | - 40 V | - 40 A | 9.5 mOhms | ||||||||||||||||||
|
2,038
In-stock
|
onsemi | MOSFET NFET 40V 51A 9.5MOHM | SMD/SMT | TO-252-3 | Reel | Si | N-Channel | 40 V | 51 A | 9.5 mOhms | |||||||||||||||||||
|
1,634
In-stock
|
IR / Infineon | MOSFET MOSFT 30V 56A 9.5mOhm 9.6nC | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 56 A | 9.5 mOhms | 2.25 V | 14 nC |