- Vgs - Gate-Source Voltage :
- Mounting Style :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
26 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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981
In-stock
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STMicroelectronics | MOSFET N-Ch 1200V 1.95 Ohm 6A Zener SuperMESH3 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 6 A | 2.4 Ohms | 34 nC | Enhancement | |||||
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2,316
In-stock
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STMicroelectronics | MOSFET N-Ch 800 Volt 4.3 A Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4.3 A | 2.4 Ohms | 32.4 nC | Enhancement | |||||
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4,073
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 2 A | 2.4 Ohms | 2.1 V | 16 nC | Enhancement | CoolMOS | |||
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615
In-stock
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STMicroelectronics | MOSFET N-Ch 1200V 1.95 Ohm 6A Zener SuperMESH3 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 6 A | 2.4 Ohms | 34 nC | Enhancement | |||||
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421
In-stock
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STMicroelectronics | MOSFET N-Ch 1200V 1.95 Ohm 6A Zener SuperMESH3 | 30 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 6 A | 2.4 Ohms | 34 nC | Enhancement | |||||
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25,834
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 mA | 2.4 Ohms | 800 mV | 900 pC | Enhancement | ||||
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6,320
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -150V -0.7A 2400mOhm 6nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | P-Channel | - 150 V | - 700 mA | 2.4 Ohms | 6 nC | ||||||||
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3,780
In-stock
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onsemi | MOSFET NCH 10V DRIVE SERIES | 30 V | SMD/SMT | SC-62-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 1.2 A | 2.4 Ohms | 3.5 V | 4.2 nC | |||||
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17,933
In-stock
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Diodes Incorporated | MOSFET P-Ch ENH FET -30V 2.4mOhm -10V -300mA | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | Si | P-Channel | - 30 V | - 300 mA | 2.4 Ohms | - 2.4 V | 1.2 nC | Enhancement | |||||
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6,298
In-stock
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Diodes Incorporated | MOSFET 60V Enh Mode FET 12Vgss 470mA 610mW | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 470 mA | 2.4 Ohms | 1.3 V | 740 pC | Enhancement | ||||
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17,176
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 | +/- 25 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 400 mA | 2.4 Ohms | - 2.3 V | 4 nC | Enhancement | ||||
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33,861
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 mA | 2.4 Ohms | 800 mV | 900 pC | Enhancement | ||||
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17,194
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 mA | 2.4 Ohms | 800 mV | 900 pC | Enhancement | ||||
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631
In-stock
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STMicroelectronics | MOSFET N-Ch 800 Volt 4.3 A Zener SuperMESH | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4.3 A | 2.4 Ohms | Enhancement | ||||||
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4,656
In-stock
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Diodes Incorporated | MOSFET 60V Enh Mode FET 12Vgss 470mA 610mW | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 470 mA | 2.4 Ohms | 1.3 V | 740 pC | Enhancement | ||||
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3,567
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 20Vgss SOT23 | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 470 mA | 2.4 Ohms | 1.3 V | 0.74 nC | Enhancement | ||||
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8,885
In-stock
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Diodes Incorporated | MOSFET 30V P-CH MOSFET | +/- 20 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 400 mA | 2.4 Ohms | - 2.3 V | 1.3 nC | Enhancement | ||||
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41
In-stock
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IXYS | MOSFET 6 Amps 1200V 2.700 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 6 A | 2.4 Ohms | Enhancement | ||||||
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8,460
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 mA | 2.4 Ohms | 800 mV | 900 pC | Enhancement | ||||
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10,970
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 mA | 2.4 Ohms | 800 mV | 900 pC | Enhancement | ||||
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2,884
In-stock
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Diodes Incorporated | MOSFET 30V P-CH ENHANCEMENT 2.4mOhm -10V -300mA | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 300 mA | 2.4 Ohms | - 2.4 V | 1.2 nC | Enhancement | ||||
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450
In-stock
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Diodes Incorporated | MOSFET 30V P-CH MOSFET | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 300 mA | 2.4 Ohms | - 2.4 V | 1.2 nC | Enhancement | ||||
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3,506
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 mA | 2.4 Ohms | 800 mV | 900 pC | Enhancement | ||||
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5,134
In-stock
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Toshiba | MOSFET P-Ch Vth -0.5 -1.5V RDS 2.4Ohm 200mW | 20 V | SMD/SMT | SOT-346-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 200 mA | 2.4 Ohms | - 1.5 V | ||||||
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1,532
In-stock
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STMicroelectronics | MOSFET N-Ch 500 Volt 3 Amp Zener SuperMESH | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 3 A | 2.4 Ohms | Enhancement | ||||||
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1,470
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 1.9A IPAK-3 | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 1.9 A | 2.4 Ohms | 2.1 V | 12 nC | Enhancement | CoolMOS |
