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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,416
In-stock
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Fairchild Semiconductor | MOSFET PT8 40V/20V LL NCh PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 40 V | 12 A | 9.7 mOhms | 9.7 nC, 18.5 nC | PowerTrench | ||||||
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14,020
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 130A 9.7mOhm 161nC Qg | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 130 A | 9.7 mOhms | 161 nC | Enhancement | |||||
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30
In-stock
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IXYS | MOSFET | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 175 V | 150 A | 9.7 mOhms | 2.5 V | 233 nC | Enhancement | Trench2, HiperFET | ||||
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4,800
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH 5.7mOhm DirectFET 11nC | 20 V | SMD/SMT | DirectFET-ST | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 16 A | 9.7 mOhms | 2.2 V | 11 nC | |||||
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2,000
In-stock
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Toshiba | MOSFET UMOSVIII 100V 10m max(VGS=10V) DPAK | 10 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 33 A | 9.7 mOhms | |||||||||
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360
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 70A D2PAK-2 OptiMOS 3 | 20 V | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 70 A | 9.7 mOhms | Enhancement | OptiMOS |
