- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,560
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 190A 1.95mOhm 57nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 260 A | 1.95 mOhms | 1.9 V | 57 nC | |||||
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940
In-stock
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Infineon Technologies | MOSFET 30V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 247 A | 1.95 mOhms | 2.35 V | 55 nC | |||||
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75
In-stock
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Infineon Technologies | MOSFET MOSFET N CH 60V 240A D2PAK | SMD/SMT | TO-263-7 | Tube | 1 Channel | Si | N-Channel | 60 V | 255 A | 1.95 mOhms | 3.7 V | 300 nC | StrongIRFET | |||||||
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4,940
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2 | 12 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 30 A | 1.95 mOhms | Enhancement | OptiMOS | |||||
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3,000
In-stock
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Fairchild Semiconductor | MOSFET 25V N-Chan Dual Cool PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 49 A | 1.95 mOhms | 1.7 V | 22 nC |
