- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
-
- ATPAK-3 (1)
- DSBGA-6 (1)
- DSBGA-9 (1)
- HSOF-8 (1)
- PLUS-247-3 (1)
- Power-56-8 (1)
- SO-8 (2)
- SOIC-8 (2)
- SOP-8 (2)
- SOT-223-4 (1)
- SOT-227-4 (4)
- SOT-26-6 (1)
- SOT-323-3 (1)
- SSOT-6 (1)
- TO-220-3 (2)
- TO-247-3 (10)
- TO-252-3 (3)
- TO-263-3 (2)
- TO-264-3 (4)
- TO-268-3 (1)
- TO-3PN-3 (1)
- TSM-3 (1)
- TSON-Advance-8 (1)
- TSOP-6 (1)
- U-DFN2020-E-6 (1)
- U-WLB1515-9 (1)
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 20 A (1)
- - 27 A (1)
- - 3.2 A (1)
- - 4 A (2)
- - 5.1 A (1)
- - 5.4 A (1)
- - 5.5 A (1)
- - 6 A (2)
- - 6.5 A (1)
- - 7 A (1)
- 10 A (2)
- 102 A (2)
- 110 A (1)
- 25 A (1)
- 4.5 A (1)
- 40 A (1)
- 42 A (1)
- 47 A (1)
- 5 A (1)
- 5.2 A (1)
- 57 A (1)
- 6 A (1)
- 60 A (3)
- 61.8 A (3)
- 62 A (1)
- 69 A (1)
- 72 A (3)
- 83.2 A (2)
- 86 A (1)
- 9 A (2)
- 90 A (6)
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
48 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,408
In-stock
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onsemi | MOSFET PCH 4V DRIVE SERIES | +/- 20 V | SMD/SMT | ATPAK-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 27 A | 33 mOhms | - 2.6 V | 33.5 nC | Enhancement | ||||
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402
In-stock
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IXYS | MOSFET 90 Amps 250V | 20 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 90 A | 33 mOhms | 4.5 V | 640 nC | Enhancement | LinearL2 | |||
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9,421
In-stock
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Fairchild Semiconductor | MOSFET SSOT-6 P-CH | 8 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.5 A | 33 mOhms | Enhancement | PowerTrench | |||||
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2,024
In-stock
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Fairchild Semiconductor | MOSFET PT5 150V/20V Nch Power Trench MOSFET | SMD/SMT | Power-56-8 | + 150 C | Reel | Si | N-Channel | 150 V | 42 A | 33 mOhms | 25 nC | PowerTrench | ||||||||
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GET PRICE |
7,650
In-stock
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Infineon Technologies | MOSFET MOSFT 250V 60A 33mOhm 99nC Qg | 30 V | Through Hole | TO-220-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 60 A | 33 mOhms | 99 nC | Enhancement | ||||
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542
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 83.2A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 83.2 A | 33 mOhms | 2.5 V | 330 nC | Enhancement | CoolMOS | |||
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206
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 83.2A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 83.2 A | 33 mOhms | 2.5 V | 330 nC | Enhancement | CoolMOS | |||
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926
In-stock
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STMicroelectronics | MOSFET N-Ch 100 Volt 40 Amp | 17 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 40 A | 33 mOhms | Enhancement | ||||||
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1,879
In-stock
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STMicroelectronics | MOSFET N-Ch 100 Volt 25 Amp | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 25 A | 33 mOhms | Enhancement | ||||||
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3,864
In-stock
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STMicroelectronics | MOSFET Automotive-grade N-channel 30 V, 25 mOhm typ, 10 A STripFE... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 33 mOhms | 1 V | 3.7 nC | Enhancement | ||||
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30
In-stock
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IXYS | MOSFET 90 Amps 250V | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 90 A | 33 mOhms | |||||||
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24,300
In-stock
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Infineon Technologies | MOSFET MOSFT 250V 57A 33mOhm 99nC Qg | 30 V | Through Hole | TO-247-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 57 A | 33 mOhms | 99 nC | Enhancement | |||||
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18
In-stock
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IXYS | MOSFET 90 Amps 250V | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 90 A | 33 mOhms | 4.5 V | 640 nC | Enhancement | LinearL2 | |||
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31
In-stock
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Infineon Technologies | MOSFET | 30 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 69 A | 33 mOhms | 3 V | 110 nC | Enhancement | CoolMOS | |||
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2,805
In-stock
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onsemi | MOSFET NCH 0.9V DRIVE SERIE | 5 V | SMD/SMT | SOT-323-3 | - 5 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.5 A | 33 mOhms | 300 mV | 11 nC | Enhancement | ||||
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3,395
In-stock
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Diodes Incorporated | MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 33 mOhms | Enhancement | ||||||
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183
In-stock
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IXYS | MOSFET 62 Amps 150V 0.04 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 62 A | 33 mOhms | 5.5 V | 70 nC | Enhancement | PolarHT | |||
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3,057
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 8Vgss 1496pF 14.4nC | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6.5 A | 33 mOhms | - 1.1 V | 14.4 nC | Enhancement | PowerDI | |||
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47
In-stock
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IXYS | MOSFET 102 Amps 300V 0.033 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 102 A | 33 mOhms | 5 V | 224 nC | Enhancement | PolarHT | |||
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20
In-stock
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IXYS | MOSFET 102 Amps 300V 0.033 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 86 A | 33 mOhms | 5 V | 224 nC | Enhancement | PolarHV, HiPerFET | |||
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4
In-stock
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IXYS | MOSFET 850V X-Class HiPerFE Power MOSFET | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 110 A | 33 mOhms | 3.5 V | 425 nC | Enhancement | ||||
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1,800
In-stock
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onsemi | MOSFET PFET S08S 20V 5.4A 0.033R | SOIC-8 | Reel | Si | P-Channel | - 20 V | - 5.4 A | 33 mOhms | ||||||||||||
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2,465
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET 40mOhm -25V -5.2A | - 6 V | SMD/SMT | U-WLB1515-9 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 25 V | - 4 A | 33 mOhms | - 1.1 V | 6 nC | Enhancement | ||||
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210
In-stock
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Toshiba | MOSFET DTMOSIV 600V 40mOhm 61.8A 400W 6500pF | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 61.8 A | 33 mOhms | 2.7 V to 3.7 V | 180 nC | DTMOSIV | |||||
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89
In-stock
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Toshiba | MOSFET N-Ch 61.8A 400W FET 600V 3500pF 180nC | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 61.8 A | 33 mOhms | 2.7 V to 3.7 V | 180 nC | Enhancement | |||||
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1,044
In-stock
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Toshiba | MOSFET N-Ch -30V FET 1650pF -7A 1.9W | - 25 V / + 20 V | SMD/SMT | SOP-8 | Reel | 1 Channel | Si | P-Channel | - 40 V | - 7 A | 33 mOhms | |||||||||
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1,141
In-stock
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Texas instruments | MOSFET PCh NexFET Power MOSFET | - 6 V | SMD/SMT | DSBGA-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 33 mOhms | - 800 mV | 3.4 nC | NexFET | ||||
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2,336
In-stock
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Toshiba | MOSFET N-Ch 30V FET 9A 1.9W 690pF | SMD/SMT | SOP-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 9 A | 33 mOhms | ||||||||||
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5
In-stock
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Toshiba | MOSFET DTMOSIV-High Speed 600V 40mOhmmax | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 61.8 A | 33 mOhms | 3.5 V | 135 nC | Enhancement | ||||
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955
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 47A D2PAK-2 SIPMOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 47 A | 33 mOhms | Enhancement | SIPMOS |
