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15 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,543
In-stock
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Fairchild Semiconductor | MOSFET 60V 80A Power56 N-Chnl PowerTrench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 6.6 mOhms | 2 V | 55 nC | Enhancement | PowerTrench | ||||
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24,558
In-stock
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Infineon Technologies | MOSFET N-Ch 120V 98A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 120 V | 98 A | 6.6 mOhms | 2 V | 88 nC | Enhancement | OptiMOS | ||||
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4,800
In-stock
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Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 7mOhms | 16 V | SMD/SMT | DirectFET-SC | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 58 A | 6.6 mOhms | 2.5 V | 22 nC | ||||||
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8,800
In-stock
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Infineon Technologies | MOSFET N-Ch 120V 98A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 120 V | 98 A | 6.6 mOhms | 2 V | 88 nC | Enhancement | OptiMOS | ||||
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214
In-stock
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Fairchild Semiconductor | MOSFET 100V TO263 7L JEDEC GREEN EMC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 200 A | 6.6 mOhms | 2 V | 84 nC | Enhancement | |||||
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1,309
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 80A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 80 A | 6.6 mOhms | 2.2 V | 42 nC | Enhancement | |||||
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1,578
In-stock
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Infineon Technologies | MOSFET 75V Single N-Channel HEXFET Power | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 75 V | 68 A | 6.6 mOhms | 3.7 V | 110 nC | Enhancement | StrongIRFET | ||||||
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767
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 71 A | 6.6 mOhms | 2.1 V | 87 nC | Enhancement | StrongIRFET | ||||
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88
In-stock
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IXYS | MOSFET 110 Amps 55V 0.0066 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 110 A | 6.6 mOhms | Enhancement | |||||||
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97
In-stock
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IXYS | MOSFET 110 Amps 55V 0.0066 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 110 A | 6.6 mOhms | Enhancement | |||||||
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25
In-stock
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IXYS | MOSFET 130 Amps 65V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 65 V | 130 A | 6.6 mOhms | |||||||||||
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969
In-stock
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Texas instruments | MOSFET CSD19532Q5B Pkg spin | 20 V | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 6.6 mOhms | 2.2 V | 44 nC | Enhancement | ||||||
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VIEW | IXYS | MOSFET 130 Amps 65V | SMD/SMT | TO-263-3 | Tube | Si | N-Channel | 65 V | 130 A | 6.6 mOhms | ||||||||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 30V 0.006 Ohm 13A STripFET V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 30 V | 13 A | 6.6 mOhms | ||||||||||
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VIEW | Toshiba | MOSFET MOSFET N-CH 40V 18A | SOP-8 | Reel | 1 Channel | Si | N-Channel | 40 V | 18 A | 6.6 mOhms |