- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
31 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,391
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 17.2 A | 63 mOhms | Enhancement | ||||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 53A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 53 A | 63 mOhms | 2.5 V | 170 nC | Enhancement | CoolMOS | |||
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692
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 0.056 Ohm 42 A MDmesh M5 | SMD/SMT | TO-263-3 | Reel | Si | N-Channel | 650 V | 26.5 A | 63 mOhms | |||||||||||
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334
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 53.5A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 53.5 A | 63 mOhms | 2.5 V | 170 nC | Enhancement | CoolMOS | |||
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9,535
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 2.8nC | 12 V | SMD/SMT | PQFN-6 | Reel | 2 Channel | Si | N-Channel | 30 V | 3.6 A | 63 mOhms | 2.8 nC | ||||||||
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2,730
In-stock
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STMicroelectronics | MOSFET N-channel 300 V, 0.063 Ohm typ., 42 A STripFET(TM) II ... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 300 V | 42 A | 63 mOhms | 2 V | 90 nC | Enhancement | ||||
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615
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 0.056 Ohm 42 A MDmesh M5 | Through Hole | TO-247-3 | Tube | Si | N-Channel | 650 V | 42 A | 63 mOhms | |||||||||||
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656
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 0.056 Ohm 42 A MDmesh M5 | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 26.5 A | 63 mOhms | ||||||||||
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12,803
In-stock
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Infineon Technologies | MOSFET MOSFT 3.4A 63mOhm 30V 2.5V drv capable | 12 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 3.4 A | 63 mOhms | 2.9 nC | ||||||||
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3,815
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Ch QFET Logic Level | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 16.8 A | 63 mOhms | Enhancement | ||||||
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963
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 36A 44mOhm 49.3nC LogLvl | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 36 A | 63 mOhms | 49.3 nC | ||||||||
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136
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 0.056 Ohm 42 A MDmesh M5 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 26.5 A | 63 mOhms | ||||||||||
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329
In-stock
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Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 53.5 A | 63 mOhms | 3.5 V | 100 nC | Enhancement | CoolMOS | |||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 53A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 53 A | 63 mOhms | 2.5 V | 170 nC | Enhancement | CoolMOS | |||
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175
In-stock
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Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 53.5 A | 63 mOhms | 3.5 V | 100 nC | Enhancement | CoolMOS | |||
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51
In-stock
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STMicroelectronics | MOSFET N-chanel 650 V 0.056 Ohm typ 42 A | 25 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 42 A | 63 mOhms | 4 V | 98 nC | ||||||
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4,715
In-stock
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onsemi | MOSFET SWITCHING DEVICE | 10 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 63 mOhms | |||||||
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1,740
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 60Vgss 25A Idm | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 18 A | 63 mOhms | 1 V | 14 nC | Enhancement | ||||
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15
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 20A 44mOhm 49.3nC LogLvl | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 20 A | 63 mOhms | 49.3 nC | ||||||||
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236,500
In-stock
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Nexperia | MOSFET PMV65UNE/TO-236AB/REEL 7 | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.4 A | 63 mOhms | 450 mV | 6 nC | Enhancement | ||||
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2,020
In-stock
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Texas instruments | MOSFET 12V N-Channel FemtoFETGäó MOSFET 3-PI... | 8 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 3.6 A | 63 mOhms | 550 mV | 1.2 nC | Enhancement | ||||
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150
In-stock
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Texas instruments | MOSFET 12V N-Channel FemtoFETGäó MOSFET 3-PI... | 8 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 3.6 A | 63 mOhms | 550 mV | 1.2 nC | Enhancement | ||||
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52,550
In-stock
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Fairchild Semiconductor | MOSFET SSOT-3 P-CH -30V | 20 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 63 mOhms | Enhancement | PowerTrench | |||||
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1,000
In-stock
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STMicroelectronics | MOSFET Automotive-grade N-channel 650 V, 0.058 Ohm typ., 42 A MDmes... | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 42 A | 63 mOhms | 3 V | 100 nC | Enhancement | ||||
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959
In-stock
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STMicroelectronics | MOSFET N-Ch 300V 0.063Ohm 42A pwr MOSFET | 20 V | Through Hole | TO-220-3 | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 42 A | 63 mOhms | 3 V | 90 nC | ||||||
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574
In-stock
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STMicroelectronics | MOSFET N-Ch 300 V 0.063 Ohm 42 A STripFET(TM) | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 42 A | 63 mOhms | 3 V | 90 nC | Enhancement | STripFET | |||
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20
In-stock
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IXYS | MOSFET 45 Amps 800V | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 44 A | 63 mOhms | 3.9 V | 360 nC | Enhancement | CoolMOS | |||
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VIEW | Diodes Incorporated | MOSFET 60V N-Ch Enh FET 60Vgss 25A Idm | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 18 A | 63 mOhms | 1 V | 14 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 700V 53.5A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 53.5 A | 63 mOhms | 2.5 V | 170 nC | Enhancement | CoolMOS | |||
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VIEW | Toshiba | MOSFET P-Ch MOS 1770pF 41W 36nC -15A -60V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 60 V | - 15 A | 63 mOhms | 36 nC |
