- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
22 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
5,000
In-stock
|
Infineon Technologies | MOSFET HIGH POWER NEW | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 23 A | 88 mOhms | 3 V | 34 nC | Enhancement | |||||
|
100
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 0.110 Ohm typ., 38 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 40 A | 88 mOhms | 3 V | 89 nC | Enhancement | ||||||
|
82
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 0.110 Ohm typ., 38 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 40 A | 88 mOhms | 3 V | 89 nC | Enhancement | ||||||
|
7,173
In-stock
|
Fairchild Semiconductor | MOSFET 100V NCh PowerTrench | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.7 A | 88 mOhms | Enhancement | PowerTrench | ||||||
|
4,593
In-stock
|
Fairchild Semiconductor | MOSFET 100/20V Single N-Channel Power Trench Mosfet | 20 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.3 A | 88 mOhms | 2 V | 5.2 nC | Enhancement | PowerTrench | ||||
|
338
In-stock
|
STMicroelectronics | MOSFET Nchanl 600 V 78 Ohm typ 34 A Pwr MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 34 A | 88 mOhms | 3 V | 57 nC | ||||||
|
GET PRICE |
5,600
In-stock
|
STMicroelectronics | MOSFET N-chanel 600 V 0.078 Ohm typ 34 A | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 34 A | 88 mOhms | 3 V | 57 nC | |||||
|
555
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 34 A | 88 mOhms | 3 V | 57 nC | Enhancement | |||||
|
651
In-stock
|
STMicroelectronics | MOSFET N-Ch 600V 0.075 Ohm 35A FDmesh II | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 88 mOhms | 145 nC | Enhancement | ||||||
|
821
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 0.078Ohm typ. 34A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 34 A | 88 mOhms | 3 V | 57 nC | ||||||
|
124
In-stock
|
STMicroelectronics | MOSFET N-channel 600V, 35A FDMesh II | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 88 mOhms | Enhancement | |||||||
|
7,829
In-stock
|
Diodes Incorporated | MOSFET 0.35W 28V 1.6A | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 28 V | 1.6 A | 88 mOhms | Enhancement | |||||||
|
2,025
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 10 A | 88 mOhms | Enhancement | QFET | ||||||
|
1,785
In-stock
|
onsemi | MOSFET NFET 60V 3A 0.100R | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 3 A | 88 mOhms | 10.6 nC | |||||||
|
32
In-stock
|
Toshiba | MOSFET N-Ch 30.8A 230W FET 600V 3000pF 86nC | 10 V | Through Hole | TO-3PN-3 | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 88 mOhms | 105 nC | ||||||||||
|
24
In-stock
|
IXYS | MOSFET 60 Amps 550V 0.09 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 60 A | 88 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 60 Amps 550V 0.09 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 60 A | 88 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 21 A | 88 mOhms | 3 V | 45 nC | Enhancement | CoolMOS | ||||
|
VIEW | Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 21 A | 88 mOhms | 3 V | 45 nC | Enhancement | CoolMOS | ||||
|
198
In-stock
|
STMicroelectronics | MOSFET N-channel 600 V 0078 typ 34 A Pwr MOSFET | 25 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 34 A | 88 mOhms | 3 V | 57 nC | ||||||
|
VIEW | STMicroelectronics | MOSFET N-channel 600V Power MDmesh | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 88 mOhms | Enhancement | |||||||
|
VIEW | Toshiba | MOSFET Vds=30V Id=2.4A 3Pin | 20 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.4 A | 88 mOhms | Enhancement |