- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
20 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,309
In-stock
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Fairchild Semiconductor | MOSFET 20V Dual N-Channel PowerTrench | 8 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 5 A | 54 mOhms | Enhancement | PowerTrench | |||||
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2,500
In-stock
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Fairchild Semiconductor | MOSFET N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 29 A | 54 mOhms | Enhancement | PowerTrench | |||||
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2,855
In-stock
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Fairchild Semiconductor | MOSFET N-Ch Power Trench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 29 A | 54 mOhms | Enhancement | PowerTrench | |||||
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3,895
In-stock
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onsemi | MOSFET 60V 18A N-Channel | 15 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 18 A | 54 mOhms | Enhancement | ||||||
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609,400
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -20V -4.3A 54mOhm -2.5V cpbl | 12 V | SMD/SMT | SOT-23-3 | Reel | Si | P-Channel | - 20 V | - 4.3 A | 54 mOhms | 6.9 nC | |||||||||
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384
In-stock
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Infineon Technologies | MOSFET 200V 1 N-CH HEXFET 54mOhms 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 60 nC | Enhancement | |||||
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GET PRICE |
8,500
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 44A 54mOhm 60nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 60 nC | Enhancement | ||||
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VIEW | IR / Infineon | MOSFET MOSFT 200V 44A 54mOhm 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 60 nC | Enhancement | ||||||
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376
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 54mOhms 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 5 V | 60 nC | Enhancement | ||||
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2,721
In-stock
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Nexperia | MOSFET PMV100ENEA/TO-236AB/REEL 7" Q3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3 A | 54 mOhms | 1 V | 5.5 nC | Enhancement | ||||
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7,318
In-stock
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onsemi | MOSFET NCH 1.8V DRIVE SERIE | 12 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.5 A | 54 mOhms | 400 mV | 2.8 nC | Enhancement | |||||
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1,710
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC | 20 V | SMD/SMT | PowerDI3333-8 | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 4.2 A | 54 mOhms | 1.5 V | 25.2 nC | Enhancement | PowerDI | ||||
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238
In-stock
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IR / Infineon | MOSFET PLANAR_MOSFETS | 30 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 60 nC | Enhancement | |||||
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28
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 300V/70A | 30 V | SMD/SMT | TO-268-3 | Tube | 1 Channel | Si | N-Channel | 300 V | 70 A | 54 mOhms | 98 nC | HyperFET | |||||||
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56
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 300V/70A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 300 V | 70 A | 54 mOhms | 98 nC | HyperFET | |||||||
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1,144
In-stock
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Toshiba | MOSFET N-Ch MOS 8A 60V 25W 400pF 0.054 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 8 A | 54 mOhms | ||||||||||
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1,513
In-stock
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Toshiba | MOSFET P-Ch U-MOS VI FET ID -6A -20V 1650pF | 8 V | SMD/SMT | UF6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 54 mOhms | - 0.3 V to - 1 V | 23.1 nC | |||||
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1,260
In-stock
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Fairchild Semiconductor | MOSFET TO-220 N-CH 150V 29A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 29 A | 54 mOhms | Enhancement | PowerTrench | |||||
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VIEW | Toshiba | MOSFET X35PBF Power MOSFET Trans VGS10VVDS200V | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 13 A | 54 mOhms | 2 V to 4 V | 11.2 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET P-ch -40V -4.8A PS-8 | SMD/SMT | PS8-8 | Reel | 1 Channel | Si | P-Channel | - 40 V | - 4.8 A | 54 mOhms |
