- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,183
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Channel MOSFET, UniFET | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 6.2 A | 430 mOhms | 12 nC | |||||||||
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1,192
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 12.5 A | 430 mOhms | Enhancement | QFET | ||||||
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1,843
In-stock
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Fairchild Semiconductor | MOSFET N-CH/250V/9A/QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 8.8 A | 430 mOhms | Enhancement | |||||||
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3,024
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 5A DPAK-2 | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 5 A | 430 mOhms | 3 V | 4.7 nC | Enhancement | ||||||
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6,407
In-stock
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onsemi | MOSFET PCH 2.5V Power MOSFE | +/- 10 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 430 mOhms | - 1.3 V | 2.8 nC | Enhancement | |||||
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994
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Channel Advance Q-FET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 8.8 A | 430 mOhms | Enhancement | QFET | ||||||
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1,354
In-stock
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Fairchild Semiconductor | MOSFET 250V 8.8A N-Chan | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 8.8 A | 430 mOhms | Enhancement | |||||||
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64,130
In-stock
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Nexperia | MOSFET 30V P-Channel Trench MOSFET | +/- 8 V | SMD/SMT | DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1 A | 430 mOhms | - 950 mV | 1.4 nC | Enhancement | |||||
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393
In-stock
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STMicroelectronics | MOSFET N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 10 A | 430 mOhms | 3 V | 17 nC | Enhancement | ||||||
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19
In-stock
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IXYS | MOSFET 26 Amps 1000V 0.39 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 430 mOhms | 6.5 V | 197 nC | Enhancement | Polar, HiPerFET | ||||
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490
In-stock
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STMicroelectronics | MOSFET N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-262-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 10 A | 430 mOhms | 2 V to 4 V | 17 nC | Enhancement | ||||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 9.3 A | 430 mOhms | 2.5 V | 20 nC | Enhancement | |||||
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GET PRICE |
46,520
In-stock
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Toshiba | MOSFET N-Ch RDS 0.33 Ohm Yfs 6.5s 10uA 600V | SMD/SMT | TO-220FP-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 13 A | 430 mOhms | ||||||||||
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VIEW | STMicroelectronics | MOSFET POWER MOSFET N-CH 650V | Through Hole | TO-220-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 8.5 A | 430 mOhms | 4 V | 22 nC |