- Vgs - Gate-Source Voltage :
- Mounting Style :
- Vds - Drain-Source Breakdown Voltage :
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18 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
39,300
In-stock
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STMicroelectronics | MOSFET N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 18 A | 168 mOhms | 2 V | 29 nC | Enhancement | ||||
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1,030
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 49A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | ||||
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1,286
In-stock
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STMicroelectronics | MOSFET N-Ch 600V 0.168 Ohm 18A Mdmesh M2 | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 18 A | 168 mOhms | 3 V | 29 nC | |||||||
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1,498
In-stock
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STMicroelectronics | MOSFET N-Ch 600 V 0.168 Ohm 18 A MDmesh M2 | 25 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 18 A | 168 mOhms | 3 V | 29 nC | Enhancement | MDmesh | ||||
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508
In-stock
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Fairchild Semiconductor | MOSFET SprFET2 650V 190mohm FRFET TO247 longlead | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20.6 A | 168 mOhms | 5 V | 60 nC | SuperFET II | |||||
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5,060
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | ||||
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734
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 49A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | ||||
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1,400
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | ||||
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446
In-stock
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Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 8 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | ||||
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79
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | ||||
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240
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | ||||
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2,500
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | ||||
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1,400
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | ||||
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VIEW | Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 8 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | ||||
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VIEW | Toshiba | MOSFET UMOSVIII 250V 205m (VGS=10V) SOP-ADV | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 10 A | 168 mOhms | 4 V | 7 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET UMOSVIII 250V 200m (VGS=10V) TSON-ADV | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 9.9 A | 168 mOhms | 4 V | 7 nC | Enhancement | |||||
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VIEW | STMicroelectronics | MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 17 A | 168 mOhms | 3 V | 46 nC | ||||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II | 30 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 17 A | 168 mOhms | 3 V | 46 nC |