- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Packaging :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Applied Filters :
37 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Qualification | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Factory Pack Quantity | RoHS | |
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34,600
In-stock
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Vishay Semiconductors | MOSFET 60V Vds; +/-8V Vgs SOT-23; 4A Id | - 8 V, + 8 V | Tape & Reel (TR) | AEC-Q101 | 1 Channel | 3 W | N-Channel | 60 V | 2 A | 240 mOhms | 460 mV | 2.5 nC | 3000 | Green available | ||||||||||
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12,234
In-stock
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IR / Infineon | MOSFET MOSFT PCh -150V -2.2A 240mOhm 33nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | P-Channel | - 150 V | - 2.2 A | 240 mOhms | 33 nC | ||||||||||||
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825
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.5 A | 240 mOhms | Enhancement | QFET | |||||||||
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2,464
In-stock
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IR / Infineon | MOSFET 1 P-CH -150V HEXFET 240mOhms 33nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 2.2 A | 240 mOhms | - 5 V | 33 nC | Enhancement | ||||||||
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738
In-stock
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Fairchild Semiconductor | MOSFET UniFET, 400V | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 19 A | 240 mOhms | Enhancement | UniFET | |||||||||
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4,369
In-stock
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Diodes Incorporated | MOSFET 100V P-CH MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 9 A | 240 mOhms | - 3 V | 17.5 nC | Enhancement | ||||||||
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4,002
In-stock
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Fairchild Semiconductor | MOSFET 20V Sgl N-Chl 2.5V Spec PwrTrch MOSFET | 12 V | SMD/SMT | SOT-523F-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 600 mA | 240 mOhms | Enhancement | PowerTrench | |||||||||
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1,754
In-stock
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onsemi | MOSFET -30V -1.95A P-Channel | - 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.95 A | 240 mOhms | Enhancement | ||||||||||
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79
In-stock
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IXYS | MOSFET Polar3 HiPerFET Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 240 mOhms | 5 V | 42 nC | Enhancement | Polar3, HiperFET | |||||||
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56
In-stock
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IXYS | MOSFET 30 Amps 600V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 240 mOhms | 4.5 V | 335 nC | Enhancement | |||||||||
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461
In-stock
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Infineon Technologies | MOSFET P-Ch -100V -15A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 240 mOhms | 37 nC | Enhancement | SIPMOS | ||||||||
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130
In-stock
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IXYS | MOSFET 600V 30A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 240 mOhms | Enhancement | HyperFET | |||||||||
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20
In-stock
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IXYS | MOSFET 30.0 Amps 600 V 0.24 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 240 mOhms | 5 V | 82 nC | Enhancement | PolarHV | |||||||
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18
In-stock
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IXYS | MOSFET 30.0 Amps 600 V 0.24 Ohm Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 240 mOhms | Enhancement | ||||||||||
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242
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 500 V | 24 A | 240 mOhms | 4 V | 90 nC | Enhancement | |||||||||
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11,841
In-stock
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Toshiba | MOSFET Small-Signal MOSFET | +/- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.9 A | 240 mOhms | - 1 V | 4.6 nC | Enhancement | ||||||||
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7,907
In-stock
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Toshiba | MOSFET Small-signal MOSFET ID: -2A, VDSS: -60V | - 20 V, + 10 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2 A | 240 mOhms | - 2 V | 8.3 nC | Enhancement | |||||||||
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12
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Si | N-Channel | 800 V | 41 A | 240 mOhms | 4 V | 260 nC | Enhancement | ||||||||||
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20
In-stock
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IXYS | MOSFET 800V 34A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 34 A | 240 mOhms | Enhancement | HyperFET | |||||||||
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4,981
In-stock
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STMicroelectronics | MOSFET N-Ch 550V 0.18 13A MDmesh M5 Power MOS | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 550 V | 13 A | 240 mOhms | ||||||||||||||
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529
In-stock
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IXYS | MOSFET 30 Amps 600V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 240 mOhms | 4.5 V | 335 nC | Enhancement | Linear L2 | |||||||
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VIEW | IXYS | MOSFET 44 Amps 1000V 0.22 Rds | 30 V | SMD/SMT | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 22 A | 240 mOhms | Enhancement | HyperFET | |||||||||
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VIEW | IXYS | MOSFET TenchP Power MOSFET | SMD/SMT | TO-263-3 | Tube | Si | P-Channel | - 150 V | - 15 A | 240 mOhms | |||||||||||||||
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VIEW | IXYS | MOSFET TenchP Power MOSFET | Through Hole | TO-220-3 | Tube | Si | P-Channel | - 150 V | - 15 A | 240 mOhms | |||||||||||||||
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VIEW | IXYS | MOSFET TrenchP Power MOSFET | SMD/SMT | TO-252-3 | Tube | Si | P-Channel | - 150 V | - 15 A | 240 mOhms | |||||||||||||||
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VIEW | IXYS | MOSFET 1KV 36A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 36 A | 240 mOhms | Enhancement | HyperFET | |||||||||
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VIEW | IXYS | MOSFET 30 Amps 600V | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 240 mOhms | 4.5 V | 335 nC | Enhancement | Linear L2 | |||||||
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VIEW | IXYS | MOSFET 600V 30A | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 240 mOhms | Enhancement | HyperFET | |||||||||
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VIEW | IXYS | MOSFET 30.0 Amps 600 V 0.24 Ohm Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 240 mOhms | 5 V | 82 nC | Enhancement | PolarHV | |||||||
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9
In-stock
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IXYS | MOSFET 800V 34A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 34 A | 240 mOhms | Enhancement | HyperFET |
