- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
19 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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7,722
In-stock
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Fairchild Semiconductor | MOSFET SO-8 SGL P-CH -20V | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5 A | 47 mOhms | Enhancement | ||||||
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4,086
In-stock
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Fairchild Semiconductor | MOSFET Power MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 50 V | 16 A | 47 mOhms | Enhancement | ||||||
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3,158
In-stock
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Fairchild Semiconductor | MOSFET Power MOSFET | 10 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 50 V | 16 A | 47 mOhms | Enhancement | ||||||
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3,024
In-stock
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Fairchild Semiconductor | MOSFET 60V Single | - 8 V, + 10 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 16 A | 47 mOhms | Enhancement | ||||||
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5,326
In-stock
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Fairchild Semiconductor | MOSFET 150V N-Ch UltraFET Trench | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 4.9 A | 47 mOhms | Enhancement | UltraFET | |||||
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16,279
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 3.2A SOT-89-3 | +/- 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 3.2 A | 47 mOhms | 1.3 V | 5.6 nC | Enhancement | ||||
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4,775
In-stock
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Infineon Technologies | MOSFET 150V AUTO GRD 1 N-CH HEXFET DIRECTFET M2 | 20 V | SMD/SMT | DirectFET-M2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 18 A | 47 mOhms | 21 nC | Enhancement | |||||
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7,533
In-stock
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Fairchild Semiconductor | MOSFET Trans N-Ch 60V 4.3A | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 4.3 A | 47 mOhms | Enhancement | UltraFET | |||||
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2,121
In-stock
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Fairchild Semiconductor | MOSFET N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 45 A | 47 mOhms | Enhancement | ||||||
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887
In-stock
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Fairchild Semiconductor | MOSFET 75V N-Channel PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 6 A | 47 mOhms | Enhancement | PowerTrench | |||||
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414
In-stock
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onsemi | MOSFET PCH -60V -12A TP-FA(DPAK) | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 12 A | 47 mOhms | - 2.6 V | 26 nC | Enhancement | ||||
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2,914
In-stock
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Diodes Incorporated | MOSFET 30V N-Channel Enhance. Mode MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4.6 A | 47 mOhms | Enhancement | ||||||
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928
In-stock
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onsemi | MOSFET PCH -60V -12A TP(IPAK) | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | P-Channel | - 60 V | - 12 A | 47 mOhms | - 2.6 V | 26 nC | Enhancement | ||||
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1,262
In-stock
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Infineon Technologies | MOSFET N-CHANNEL_55/60V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 19 A | 47 mOhms | 1.2 V | 13 nC | Enhancement | ||||
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29,550
In-stock
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Nexperia | MOSFET PMPB47XP/SOT1220/REEL 7 | +/- 12 V | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5 A | 47 mOhms | - 900 mV | 21 nC | Enhancement | ||||
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1,997
In-stock
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Texas instruments | MOSFET P-CH NexFET Pwr MOSFET | - 6 V | SMD/SMT | DSBGA-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.6 A | 47 mOhms | - 850 mV | 2.2 nC | Enhancement | NexFET | |||
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VIEW | IXYS | MOSFET 60 Amps 250V 0.047 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 60 A | 47 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 60 Amps 250V 0.047 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 60 A | 47 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 60 Amps 250V 0.047 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 60 A | 47 mOhms | Enhancement | HyperFET |
