- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
16 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,570
In-stock
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Fairchild Semiconductor | MOSFET -20V Dual P-CH PowerTrench MOSFET | - 20 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 3.1 A | 155 mOhms | Enhancement | PowerTrench | ||||||
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5,067
In-stock
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onsemi | MOSFET -60V -12A P-Channel | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 12 A | 155 mOhms | Enhancement | |||||||
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335
In-stock
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Fairchild Semiconductor | MOSFET UniFET 500V | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 28 A | 155 mOhms | Enhancement | UniFET | ||||||
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3,423
In-stock
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onsemi | MOSFET PFET DPAK 60V 12A 180MO | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | Si | P-Channel | - 60 V | - 12 A | 155 mOhms | 15 nC | ||||||||
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2,254
In-stock
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Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 105mOhms | 16 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 17 A | 155 mOhms | 22.7 nC | |||||||||
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707
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13 A | 155 mOhms | 3 V | 24 nC | Enhancement | CoolMOS | ||||
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8,314
In-stock
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onsemi | MOSFET Pwr MOSFET 60V 2.2A 155mOhm SGL N-CH | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 2.2 A | 155 mOhms | ||||||||||||
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2,849
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 105mOhms 22.7nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 15 A | 155 mOhms | 22.7 nC | Enhancement | ||||||
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1,134
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 105mOhms 22.7nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 15 A | 155 mOhms | 2 V | 22.7 nC | Enhancement | |||||
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1,583
In-stock
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IR / Infineon | MOSFET MOSFT 100V 15A 105mOhm 22.7nC LogLv | 16 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 15 A | 155 mOhms | 22.7 nC | |||||||||
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504
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 15A 105mOhm 22.7nC LogLv | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 15 A | 155 mOhms | 22.7 nC | |||||||||
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2,707
In-stock
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onsemi | MOSFET PFET 30V 1.95A 20MO | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.95 A | 155 mOhms | - 3 V | 10 nC | Enhancement | |||||
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2,891
In-stock
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onsemi | MOSFET PCH 1.8V Power MOSFE | +/- 10 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4.5 A | 155 mOhms | - 1.3 V | 8.6 nC | Enhancement | |||||
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GET PRICE |
200,720
In-stock
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onsemi | MOSFET Pwr MOSFET 60V 2.2A 155mOhm SGL N-CH | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.2 A | 155 mOhms | 5.1 nC | ||||||
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GET PRICE |
8,000
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET 105mOhms 22.7nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 15 A | 155 mOhms | 22.7 nC | Enhancement | |||||
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2,250
In-stock
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onsemi | MOSFET -60V -12A P-Channel | 20 V | Through Hole | IPAK | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 12 A | 155 mOhms | Enhancement |