- Manufacture :
- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,950
In-stock
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Siliconix / Vishay | MOSFET N-Channel 60V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 12 A | 0.018 Ohms | 1.5 V | 41 nC | Enhancement | TrenchFET | ||||
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1,385
In-stock
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Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 16 A | 0.018 Ohms | - 2.5 V | 26 nC | Enhancement | TrenchFET | ||||
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1,970
In-stock
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Vishay Semiconductors | MOSFET 60V 25A 62W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 25 A | 0.018 Ohms | 1.5 V | 50 nC | Enhancement | TrenchFET | ||||
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800
In-stock
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Siliconix / Vishay | MOSFET N-Channel 200V D2PAK (TO-263) | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 200 V | 64 A | 0.018 Ohms | 2 V | 48 nC | Enhancement | ||||||
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490
In-stock
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Siliconix / Vishay | MOSFET N-Channel 200V TO-220 | +/- 20 V | Through Hole | TO-220AB-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 200 V | 64 A | 0.018 Ohms | 2 V | 48 nC | Enhancement | ||||||
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VIEW | Vishay Semiconductors | MOSFET 60V 25A 62W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 25 A | 0.018 Ohms | 1.5 V | 50 nC | Enhancement | TrenchFET |