- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,105
In-stock
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Siliconix / Vishay | MOSFET N-Chnl 60-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 32 A | 0.014 Ohms | 1.5 V | 44 nC | Enhancement | TrenchFET | |||
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2,805
In-stock
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Siliconix / Vishay | MOSFET P-Channel 12V AEC-Q101 Qualified | +/- 8 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 16 A | 0.014 Ohms | - 1 V | 75 nC | Enhancement | TrenchFET | |||
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1,760
In-stock
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Vishay Semiconductors | MOSFET 30V 8A 5W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8 A | 0.014 Ohms | 1.5 V | 21 nC | Enhancement | TrenchFET | |||
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VIEW | Siliconix / Vishay | MOSFET P Ch -12Vds 8Vgs AEC-Q101 Qualified | +/- 8 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 16 A | 0.014 Ohms | - 1 V | 75 nC | Enhancement |
