- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
17 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,566
In-stock
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IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 87 A | 7.2 mOhms | 3.7 V | 84 nC | Enhancement | StrongIRFET | |||
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107,100
In-stock
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IR / Infineon | MOSFET 100V SINGLE N-CH 9mOhms 83nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 97 A | 7.2 mOhms | 83 nC | ||||||||
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GET PRICE |
18,600
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 7.2 mOhms | 2 V | 55 nC | Enhancement | OptiMOS | ||
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GET PRICE |
58,400
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 97A 9mOhm 83nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 97 A | 7.2 mOhms | 83 nC | |||||||
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331
In-stock
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Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 97 A | 7.2 mOhms | 2 V | 116 nC | Enhancement | StrongIRFET | |||
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296
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 97A 9mOhm 83nC Qg | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 97 A | 7.2 mOhms | 83 nC | ||||||||
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1,608
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 7.2 mOhms | 2 V | 22.4 nC | Enhancement | ||||
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292
In-stock
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Infineon Technologies | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 87 A | 7.2 mOhms | 3.7 V | 84 nC | StrongIRFET | ||||
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713
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 7.2 mOhms | 2 V | 55 nC | Enhancement | OptiMOS | |||
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1,385
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 5mOhms 15nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 82 A | 7.2 mOhms | 1.8 V | 32 nC | |||||
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1,430
In-stock
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onsemi | MOSFET T6 40V NCH LL IN SO8 | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 78 A | 7.2 mOhms | 1.2 V | 23 nC | Enhancement | ||||
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GET PRICE |
9,200
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 7.2 mOhms | 2 V | 22.4 nC | Enhancement | OptiMOS | ||
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2,000
In-stock
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Vishay Semiconductors | MOSFET 100V Vds 86A Id AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-Reverse-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 86 A | 7.2 mOhms | 1.5 V | 65 nC | Enhancement | ||||
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540
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 97A 9mOhm 83nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 97 A | 7.2 mOhms | 83 nC | ||||||||
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1,470
In-stock
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onsemi | MOSFET NCH 100A 100V TO-220 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 100 V | 100 A | 7.2 mOhms | 4 V | 120 nC | Enhancement | |||||
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15,000
In-stock
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onsemi | MOSFET NCH 4.5V DRIVE SERIES | SMD/SMT | ATPAK-3 | Reel | Si | N-Channel | 60 V | 95 A | 7.2 mOhms | |||||||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 | 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V | 20 A | 7.2 mOhms | 1.7 V | 39 nC | Enhancement |
