- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
573
In-stock
|
Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 18 A | 111 mOhms | 3 V | 35 nC | Enhancement | CoolMOS | ||||
|
214
In-stock
|
Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 18 A | 111 mOhms | 3 V | 35 nC | Enhancement | CoolMOS | ||||
|
5,775
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.5 A | 111 mOhms | 700 mV | 800 pC | Enhancement | |||||
|
7,940
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.5 A | 111 mOhms | 700 mV | 800 pC | Enhancement | |||||
|
1,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 75A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 18 A | 111 mOhms | 3 V | 35 nC | Enhancement | CoolMOS | ||||
|
VIEW | Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 18 A | 111 mOhms | 3 V | 35 nC | Enhancement | CoolMOS | ||||
|
485
In-stock
|
Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 18 A | 111 mOhms | 3 V | 35 nC | Enhancement | CoolMOS | ||||
|
VIEW | Infineon Technologies | MOSFET N-Ch 700V 75A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 18 A | 111 mOhms | 3 V | 35 nC | Enhancement | CoolMOS |