- Vgs - Gate-Source Voltage :
- Mounting Style :
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- Qg - Gate Charge :
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4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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225
In-stock
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Infineon Technologies | MOSFET | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 76 A | 0.03 Ohms | 3 V | 121 nC | Enhancement | CoolMOS | |||||
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1,725
In-stock
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Vishay Semiconductors | MOSFET 60V 8A 39W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 8 A | 0.03 Ohms | 1.5 V | 20 nC | Enhancement | TrenchFET | ||||
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4,150
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 76 A | 0.03 Ohms | 3 V | 121 nC | Enhancement | CoolMOS | |||||
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VIEW | STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 68 A | 0.03 Ohms | 2 V | 118 nC | Enhancement |