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Vgs - Gate-Source Voltage :
Maximum Operating Temperature :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPZ60R037P7XKSA1
1+
$11.180
10+
$10.110
25+
$9.640
100+
$8.370
RFQ
225
In-stock
Infineon Technologies MOSFET +/- 20 V Through Hole TO-247-3 - 55 C + 150 C   1 Channel Si N-Channel 600 V 76 A 0.03 Ohms 3 V 121 nC Enhancement CoolMOS
SQS460EN-T1_GE3
1+
$1.190
10+
$0.946
100+
$0.726
500+
$0.642
3000+
$0.473
RFQ
1,725
In-stock
Vishay Semiconductors MOSFET 60V 8A 39W AEC-Q101 Qualified +/- 20 V SMD/SMT PowerPAK-1212-8 - 55 C + 175 C Reel 1 Channel Si N-Channel 60 V 8 A 0.03 Ohms 1.5 V 20 nC Enhancement TrenchFET
IPW60R037P7
1+
$10.380
10+
$9.380
25+
$8.950
100+
$7.770
RFQ
4,150
In-stock
Infineon Technologies MOSFET HIGH POWER_NEW +/- 20 V Through Hole TO-247-3 - 55 C + 150 C   1 Channel Si N-Channel 600 V 76 A 0.03 Ohms 3 V 121 nC Enhancement CoolMOS
STW70N60M2-4
600+
$7.600
1200+
$6.620
VIEW
RFQ
STMicroelectronics MOSFET 25 V Through Hole TO-247-3 - 55 C + 150 C   1 Channel Si N-Channel 600 V 68 A 0.03 Ohms 2 V 118 nC Enhancement  
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