- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Qg - Gate Charge :
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11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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864
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 600V Fast ver | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 37 A | 104 mOhms | 3.5 V | 63 nC | Enhancement | SuperFET II | ||||
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1,001
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 TO220 104mohm FRFET | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 37 A | 104 mOhms | 5 V | 145 nC | SuperFET II FRFET | ||||||
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5,434
In-stock
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onsemi | MOSFET 60V 12A N-Channel | 15 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 12 A | 104 mOhms | Enhancement | |||||||
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1,989
In-stock
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Fairchild Semiconductor | MOSFET 100/20V PT5 N-Chan PowerTrench MOSFET | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 4.2 A | 104 mOhms | PowerTrench | ||||||||
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308
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 600V Fast ver | 20 V, 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 37 A | 104 mOhms | 3.5 V | 63 nC | Enhancement | SuperFET II | ||||
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10,880
In-stock
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onsemi | MOSFET PCH 1.2V DRIVE SERIES | SMD/SMT | SOT-323-3 | Reel | Si | N-Channel | 20 V | 2 A | 104 mOhms | ||||||||||||
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2,151
In-stock
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onsemi | MOSFET NFET 60V 12A 0.104R | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 12 A | 104 mOhms | 2 V | 20 nC | |||||||
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17,980
In-stock
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onsemi | MOSFET -20V -1.37A P-Channel | 8 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.37 A | 104 mOhms | Enhancement | |||||||
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2,400
In-stock
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onsemi | MOSFET 60V 12A N-Channel | 15 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 12 A | 104 mOhms | Enhancement | |||||||
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30
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 600V/42A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 42 A | 104 mOhms | 190 nC | HyperFET | ||||||||
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3,018
In-stock
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Toshiba | MOSFET P-Ch MOS -8A -60V 27W 890pF 0.104 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 60 V | - 8 A | 104 mOhms |