- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Tradename :
- Applied Filters :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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15,000
In-stock
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Fairchild Semiconductor | MOSFET 150V N-Channel PowerTrench MOSFET | SMD/SMT | SSOT-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 2.3 A | 144 mOhms | PowerTrench | ||||||||
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100
In-stock
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Infineon Technologies | MOSFET HIGH POWER_LEGACY | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 144 mOhms | 3.5 V | 44 nC | Enhancement | CoolMOS | |||
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285
In-stock
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Infineon Technologies | MOSFET HIGH POWER_LEGACY | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 144 mOhms | 3.5 V | 44 nC | Enhancement | CoolMOS | |||
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468
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 10.4A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 144 mOhms | 3.5 V | 44 nC | Enhancement | CoolMOS | |||
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13,561
In-stock
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Toshiba | MOSFET SM Sig P-CH MOS 12V VGSS -6A -30VDSS | 12 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 6 A | 144 mOhms | |||||||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 10.4A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 144 mOhms | 3.5 V | 44 nC | Enhancement | CoolMOS | |||
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500
In-stock
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Infineon Technologies | MOSFET HIGH POWER_LEGACY | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 144 mOhms | 3.5 V | 44 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET HIGH POWER_LEGACY | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 144 mOhms | 3.5 V | 44 nC | Enhancement | CoolMOS |
