- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Applied Filters :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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955
In-stock
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Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 113 mOhms | 3.5 V | 56 nC | Enhancement | CoolMOS | ||||
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485
In-stock
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Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 113 mOhms | 3.5 V | 56 nC | Enhancement | CoolMOS | ||||
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9,355
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -1.5A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.5 A | 113 mOhms | - 2 V | - 2.3 nC | Enhancement | |||||
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129
In-stock
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Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 113 mOhms | 3.5 V | 56 nC | Enhancement | CoolMOS | ||||
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4,045
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -1.5A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.5 A | 113 mOhms | - 2 V | - 2.3 nC | Enhancement | |||||
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4,890
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -1.5A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.5 A | 113 mOhms | - 2 V | - 2.3 nC | Enhancement | |||||
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238
In-stock
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Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 113 mOhms | 3.5 V | 56 nC | Enhancement | CoolMOS | ||||
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37
In-stock
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Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 113 mOhms | 3.5 V | 56 nC | Enhancement | CoolMOS | ||||
|
500
In-stock
|
Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 113 mOhms | 3.5 V | 56 nC | Enhancement | CoolMOS |