- Manufacture :
- Mounting Style :
- Package / Case :
- Number of Channels :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
27,642
In-stock
|
onsemi | MOSFET NFET 50V 200MA 3.5O | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 200 mA | 5.6 Ohms | 1.5 V | ||||||
|
7,276
In-stock
|
Toshiba | MOSFET SM Sig MOS 2 in 1 N-Ch 0.25A 20V -10V | 10 V | SMD/SMT | ES6-6 | Reel | 2 Channel | Si | N-Channel | 20 V | 250 mA | 5.6 Ohms | |||||||||
|
8,397
In-stock
|
Toshiba | MOSFET Small-Signal MOSFET | 10 V | SMD/SMT | CST3-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 200 mA | 5.6 Ohms | 350 mV | Enhancement | |||||
|
782
In-stock
|
Toshiba | MOSFET N-Ch 900V 2.5A Rdson 6.4 Ohm | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 2.5 A | 5.6 Ohms | 12 nC |