- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
7,247
In-stock
|
Fairchild Semiconductor | MOSFET -20V Common Drain PCh 1.5V PowerTrench | 8 V | SMD/SMT | WLCSP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 3 A | 123 mOhms | Enhancement | PowerTrench | |||||
|
|
3,011
In-stock
|
Fairchild Semiconductor | MOSFET PowerTrench MOSFET and Schottky Diode | 12 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.9 A | 123 mOhms | Enhancement | PowerTrench | |||||
|
|
7,302
In-stock
|
Fairchild Semiconductor | MOSFET 30V Dual N-Channel | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 3.8 A | 123 mOhms | Enhancement | PowerTrench | ||||||
|
|
GET PRICE |
282,900
In-stock
|
Diodes Incorporated | MOSFET P-Ch -20V Enh FET 12Vgss -15A 1.4W | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 123 mOhms | - 1.25 V | 7.3 nC | Enhancement | |||
|
|
1,314
In-stock
|
Texas instruments | MOSFET 12V PCH NexFET | - 6 V | SMD/SMT | DSBGA-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 2.2 A | 123 mOhms | - 0.6 V | 2.9 nC | NexFET |
