- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
23 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,574
In-stock
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Fairchild Semiconductor | MOSFET 300V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 3.2 A | 2.2 Ohms | Enhancement | QFET | ||||||
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23,459
In-stock
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onsemi | MOSFET 20V 238mA N-Channel | 10 V | SMD/SMT | SC-75-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 238 mA | 2.2 Ohms | Enhancement | |||||||
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6,773
In-stock
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IR / Infineon | MOSFET MOSFT 200V 0.6A 2200mOhm 3.9nC | 30 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 600 mA | 2.2 Ohms | 3.9 nC | Enhancement | ||||||
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1,228
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | SC-59-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 360 mA | 2.2 Ohms | - 2 V | 5.3 nC | Enhancement | |||||
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956
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 2.3 A | 2.2 Ohms | Enhancement | QFET | ||||||
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410
In-stock
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Fairchild Semiconductor | MOSFET 40V, 110A, 2.2m Ohm NChannel PowerTrench | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 110 A | 2.2 Ohms | 2.83 V | 14 nC, 107 nC | PowerTrench | |||||
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19,651
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 230mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 230 mA | 2.2 Ohms | 600 mV | 1.4 nC | Enhancement | |||||
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16,218
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 230mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 230 mA | 2.2 Ohms | 600 mV | 1.4 nC | Enhancement | |||||
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17,850
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 230mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 230 mA | 2.2 Ohms | 600 mV | 1.4 nC | Enhancement | |||||
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146
In-stock
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IXYS | MOSFET 6Amps 1000V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1000 V | 6 A | 2.2 Ohms | 95 nC | ||||||||
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49
In-stock
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IXYS | MOSFET N-CH MOSFETS (D2) 1000V 6A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 6 A | 2.2 Ohms | 95 nC | |||||||
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1,316
In-stock
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Infineon Technologies | MOSFET N-Ch 400V 500mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 500 mA | 2.2 Ohms | 2.1 V | - | Enhancement | |||||
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VIEW | Nexperia | MOSFET NX7002BKM/XQFN3/REEL 7" Q1/T1 | 20 V | SMD/SMT | DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 350 mA | 2.2 Ohms | 1.1 V | 1 nC | Enhancement | |||||
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58
In-stock
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IXYS | MOSFET N-CH MOSFETS (D2) 1000V 6A | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 6 A | 2.2 Ohms | 95 nC | |||||||
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240
In-stock
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Nexperia | MOSFET NX7002BKMB/XQFN3/REEL 7" Q1/T1 | 20 V | SMD/SMT | DFN1006B-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 350 mA | 2.2 Ohms | 1.1 V | 1 nC | Enhancement | |||||
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276
In-stock
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Infineon Technologies | MOSFET N-Ch 400V 500mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 500 mA | 2.2 Ohms | 2.1 V | - | Enhancement | |||||
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84
In-stock
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IXYS | MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode | Through Hole | TO-220-3 | Tube | Si | N-Channel | 600 V | 4 A | 2.2 Ohms | HyperFET | |||||||||||
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140
In-stock
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IXYS | MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode | Through Hole | TO-252-3 | Tube | Si | N-Channel | 600 V | 4 A | 2.2 Ohms | HyperFET | |||||||||||
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14,568
In-stock
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Toshiba | MOSFET Small-signal FET 0.25A 20V 12pF | SOT-723-3 | Reel | 1 Channel | Si | N-Channel | 20 V | 250 mA | 2.2 Ohms | ||||||||||||
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150
In-stock
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IXYS | MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode | SMD/SMT | TO-263-3 | Tube | Si | N-Channel | 600 V | 4 A | 2.2 Ohms | HyperFET | |||||||||||
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67
In-stock
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Toshiba | MOSFET N-Ch MOS 3.7A 600V 25W 540pF 2.2 Ohm | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 600 V | 3.7 A | 2.2 Ohms | ||||||||||||
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VIEW | Toshiba | MOSFET N-Ch MOS 3.5A 600V 80W 490pF 2.2 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 3.5 A | 2.2 Ohms | |||||||||||
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VIEW | Toshiba | MOSFET N-Ch 900V 5A 45W PD Rdson 2.2 Ohm | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 5 A | 2.2 Ohms | 25 nC |