- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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48,946
In-stock
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Nexperia | MOSFET 60V N-channel Trench MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 265 mA | 2.8 Ohms | 600 mV | 490 pC | Enhancement | ||||
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17,648
In-stock
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Nexperia | MOSFET 55V N-channel Trench MOSFET | 10 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 210 mA | 2.3 Ohms | 600 mV | 500 pC | Enhancement | ||||
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2,429
In-stock
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Fairchild Semiconductor | MOSFET Snlg PT4, N 20/8V in MLP 2.05x2.05 | 1.5 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 9.4 A | 32.3 mOhms | 600 mV | 17.5 nC | PowerTrench | ||||
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2,313
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 26.5mOhm 10V 5.8A | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.8 A | 21 mOhms | 600 mV | 20 nC | Enhancement | ||||
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19,651
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 230mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 230 mA | 2.2 Ohms | 600 mV | 1.4 nC | Enhancement | ||||
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16,218
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 230mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 230 mA | 2.2 Ohms | 600 mV | 1.4 nC | Enhancement | ||||
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1,658
In-stock
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Infineon Technologies | MOSFET N-Ch 240V 350mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 4 Ohms | 600 mV | 6.8 nC | Enhancement | ||||
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2,644
In-stock
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Infineon Technologies | MOSFET N-Ch 240V 350mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 4 Ohms | 600 mV | 6.8 nC | Enhancement | ||||
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17,850
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 230mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 230 mA | 2.2 Ohms | 600 mV | 1.4 nC | Enhancement | ||||
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1,980
In-stock
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Toshiba | MOSFET Small-signal MOSFET High Speed Switching | 10 V | SMD/SMT | SOT-323-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 100 mA | 1.5 Ohms | 600 mV | Enhancement | ||||||
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12,000
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh FET 12Vgss 0.76W 676pF | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 50 mOhms | 600 mV | 7.3 nC | Enhancement | ||||
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10,000
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 26.5mOhm 12Vgs 570pF | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.8 A | 21 mOhms | 600 mV | 20 nC | Enhancement | ||||
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750
In-stock
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Texas instruments | MOSFET Dual N-Channel NexFET Pwr MOSFET | 10 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 5 A | 99 mOhms | 600 mV | 5.4 nC | NexFET | ||||
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195
In-stock
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Texas instruments | MOSFET 25V, -55 to 150 | 10 V, 8 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 60 A | 3.8 mOhms | 600 mV | 9.2 nC | Enhancement | ||||
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VIEW | Diodes Incorporated | MOSFET 30V N-Ch Enh FET 12Vgss 0.76W 676pF | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 50 mOhms | 600 mV | 7.3 nC | Enhancement |
