- Vgs - Gate-Source Voltage :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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3,871
In-stock
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Diodes Incorporated | MOSFET P-Ch -20V Enh FET 8Vgss 0.73W 2760pF | +/- 8 V | SMD/SMT | U-DFN2020-F-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 9 A | 22 mOhms | - 350 mV | 59 nC | Enhancement | |||
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7,570
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET Vdss -12V 8Vgss | 8 V | SMD/SMT | X2-DFN1010-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 2 A | 70 mOhms | - 350 mV | 5.8 nC | Enhancement | |||
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VIEW | Diodes Incorporated | MOSFET P-Ch -20V Enh FET 8Vgss 0.73W 2760pF | +/- 8 V | SMD/SMT | U-DFN2020-F-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 9 A | 22 mOhms | - 350 mV | 59 nC | Enhancement |
