- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,985
In-stock
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Siliconix / Vishay | MOSFET 40V 15A AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 15 A, 45 A | 0.018 Ohms, 0.009 Ohms | 1.3 V, 1.3 V | 19.7 nC, 33.8 nC | Enhancement | TrenchFET | |||
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4,166
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 1V-40V TSOT23 T&R 3K | 20 V, 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 3.5 A, 3.5 A | 35 mOhms, 35 mOhms | 1.3 V, 1.3 V | 9 nC, 9 nC | Enhancement | ||||
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3,122
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 41 to 60V Low Rdson | 12 V, 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 630 mA, 630 mA | 1.1 Ohms, 1.1 Ohms | 1.3 V, 1.3 V | 740 pC, 740 pC | Enhancement | ||||
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3,000
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 20Vgss TSOT26 | 12 V, 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 630 mA, 630 mA | 1.1 Ohms, 1.1 Ohms | 1.3 V, 1.3 V | 740 pC, 740 pC | Enhancement | ||||
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4,427
In-stock
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Texas instruments | MOSFET CSD87501L 30-VDual N Channel Power MOSFET | 20 V, 20 V | SMD/SMT | BGA-10 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 14 A | 6.6 mOhms, 6.6 mOhms | 1.3 V, 1.3 V | 40 nC, 40 nC | Enhancement | NexFET | |||
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5,000
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 41 to 60V Low Rdson | 12 V, 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 630 mA, 630 mA | 1.1 Ohms, 1.1 Ohms | 1.3 V, 1.3 V | 740 pC, 740 pC | Enhancement | ||||
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4,500
In-stock
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Diodes Incorporated | MOSFET 60V Switching Diode 1.8Ohm at 5Vgs 470mA | 12 V, 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 630 mA, 630 mA | 1.1 Ohms, 1.1 Ohms | 1.3 V, 1.3 V | 740 pC, 740 pC | Enhancement |
