- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,955
In-stock
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Diodes Incorporated | MOSFET 60V Dual P-Ch Enh FET 60Vds 20Vgs | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 60 V, - 60 V | - 11.3 A, - 11.3 A | 36 mOhms, 36 mOhms | - 3 V, - 3 V | 24 nC, 24 nC | Enhancement | |||
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2,500
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V, - 30 V | - 6 A, - 6 A | 20 mOhms, 20 mOhms | - 3 V, - 3 V | 22 nC, 22 nC | Enhancement | |||
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2,380
In-stock
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Diodes Incorporated | MOSFET 40V P-Ch Dual FET 20Vgs -4.2A 14.3 | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 40 V, - 40 V | - 5.2 A, - 5.2 A | 38 mOhms, 38 mOhms | - 3 V, - 3 V | 13.9 nC, 13.9 nC | Enhancement |
