- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
3,927
In-stock
|
Diodes Incorporated | MOSFET Comp Pair Enh FET 40Vdss 20Vgss | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V, - 40 V | 12.2 A, - 8.8 A | 15 mOhms, 29 mOhms | 1 V, - 1 V | 40 nC, 34 nC | Enhancement | PowerDI | |||
|
|
1,484
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS 30V Comp Pair | 20 V | SMD/SMT | SO-8 | - 55 C | + 100 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 8.5 A, 7 A | 14 mOhms, - 30 mOhms | 1 V, - 1 V | 16.1 nC, 21.1 nC | Enhancement | ||||
|
|
2,436
In-stock
|
Diodes Incorporated | MOSFET Comp Pair Enh FET 30Vdss 20Vgss | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | Si | N-Channel, P-Channel | 30 V, - 30 V | 7.2 A, 7.6 A | 35 mOhms, 41 mOhms | 1 V, - 1 V | 13.2 nC, 22 nC | Enhancement | |||||
|
|
3,000
In-stock
|
Toshiba | MOSFET N-Ch Sm Sig FET 0.1A -0.1A 20V 2-in1 | SMD/SMT | SOT-363-6 | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 180 mA | 11 Ohms | 1 V, - 1 V |
