- Vgs - Gate-Source Voltage :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,893
In-stock
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IR / Infineon | MOSFET 20V DUAL N-CH HEXFET 58mOhms 22nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel, P-Channel | 30 V | 6.5 A | 58 mOhms | - 1 V, 1 V | 22 nC | Enhancement | |||
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973
In-stock
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Infineon Technologies | MOSFET 30V DUAL N / P CH 20V VGS MAX | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel, P-Channel | 30 V | 7.3 A | 58 mOhms | - 1 V, 1 V | 22 nC | Enhancement | |||
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2,897
In-stock
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Diodes Incorporated | MOSFET Comp ENH Mode FET 12V Vdss 8V VGss | +/- 8 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | - 12 V, 12 V | - 3.8 A, 5.6 A | 29 mOhms, 61 mOhms | - 1 V, 1 V | 10.5 nC, 10.7 nC | Enhancement |
