- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
10,256
In-stock
|
Diodes Incorporated | MOSFET Dual N-Ch Enh Mode 30V 4.2Ohm 200mA | 20 V, 20 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 260 mA, 260 mA | 2.8 Ohms, 2.8 Ohms | 800 mV, 800 mV | 870 pC, 870 pC | Enhancement | |||
|
|
2,790
In-stock
|
Diodes Incorporated | MOSFET 33V Dual N-Ch Enh 30Vgss 250mA 0.35W | 20 V, 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 250 mA, 250 mA | 2.4 Ohms, 2.4 Ohms | 800 mV, 800 mV | 1.23 nC, 1.23 nC | Enhancement | |||
|
|
2,755
In-stock
|
Diodes Incorporated | MOSFET Dual N-Ch Enh FET 30Vdss 20Vdss 800mA | 20 V, 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 220 mA, 220 mA | 2.8 Ohms, 2.8 Ohms | 800 mV, 800 mV | 870 pC, 870 pC | Enhancement |
