- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
49 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
18,180
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 4.7 mOhms | 2 V | 56 nC | Enhancement | OptiMOS | |||
|
|
1,338
In-stock
|
STMicroelectronics | MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 38 A | 72 mOhms | 4 V | 56 nC | Enhancement | ||||
|
|
1,738
In-stock
|
STMicroelectronics | MOSFET Automotive-grade N-channel 400 V, 0.058 Ohm typ., 39 A MDmes... | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 400 V | 38 A | 72 mOhms | 4 V | 56 nC | Enhancement | |||||
|
|
5,088
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 4.7 mOhms | 2 V | 56 nC | Enhancement | OptiMOS | |||
|
|
955
In-stock
|
Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 113 mOhms | 3.5 V | 56 nC | Enhancement | CoolMOS | |||
|
|
2,775
In-stock
|
Infineon Technologies | MOSFET 40V, 120A, 2.7 mOhm 56 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 164 A | 3.5 mOhms | 1 V | 56 nC | Enhancement | StrongIRFET | |||
|
|
631
In-stock
|
STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 34 A | 93 mOhms | 4 V | 56 nC | Enhancement | |||||
|
|
922
In-stock
|
STMicroelectronics | MOSFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 34 A | 93 mOhms | 4 V | 56 nC | Enhancement | ||||
|
|
707
In-stock
|
STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 34 A | 93 mOhms | 4 V | 56 nC | Enhancement | |||||
|
|
977
In-stock
|
STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 34 A | 93 mOhms | 3 V | 56 nC | Enhancement | |||||
|
|
880
In-stock
|
IXYS | MOSFET MOSFET 650V/34A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 34 A | 105 mOhms | 2.7 V | 56 nC | Enhancement | ||||
|
|
937
In-stock
|
STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 34 A | 93 mOhms | 3 V | 56 nC | Enhancement | |||||
|
|
1,686
In-stock
|
IR / Infineon | MOSFET MOSFT 75V 80A 9.0mOhm 56nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 7.34 mOhms | 56 nC | ||||||||
|
|
1,653
In-stock
|
Fairchild Semiconductor | MOSFET P-CHANNEL MOSFET | +/- 20 V | SMD/SMT | SO-8 | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 11 A | 21 mOhms | - 1.4 V | 56 nC | PowerTrench | |||||
|
|
GET PRICE |
6,230
In-stock
|
onsemi | MOSFET SuperFET2, 400mohm, 800V, Zener | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 400 mOhms | 4.5 V | 56 nC | SuperFET II | ||||
|
|
GET PRICE |
10,780
In-stock
|
IR / Infineon | MOSFET MOSFT 75V 80A 9.0mOhm 56nC Qg | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 80 A | 7.34 mOhms | 56 nC | |||||||
|
|
979
In-stock
|
STMicroelectronics | MOSFET N-Ch 100V 0.0068mOhm 80A STripFETVII 150W | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 80 A | 8 mOhms | 2 V to 4 V | 56 nC | |||||
|
|
4,209
In-stock
|
Diodes Incorporated | MOSFET 20V N-Ch Enh Mode 12Vgss 80A .61W | 12 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 11.7 A | 15 mOhms | 1 V | 56 nC | Enhancement | ||||
|
|
485
In-stock
|
Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 113 mOhms | 3.5 V | 56 nC | Enhancement | CoolMOS | |||
|
|
455
In-stock
|
STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 34 A | 93 mOhms | 3 V | 56 nC | Enhancement | |||||
|
|
305
In-stock
|
IXYS | MOSFET 650V/34A Ultra Junction X2-Class | 30 V | Through Hole | TO-263-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 34 A | 105 mOhms | 2.7 V | 56 nC | Enhancement | |||||
|
|
354
In-stock
|
Fairchild Semiconductor | MOSFET UniFET1 300V N-Channel MOSFET, D2PAK | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 38 A | 103 mOhms | 3 V to 5 V | 56 nC | Enhancement | UniFET FRFET | |||
|
|
832
In-stock
|
Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 9mOhms 56nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 7.34 mOhms | 4 V | 56 nC | |||||
|
|
1,360
In-stock
|
IR / Infineon | MOSFET MOSFT 75V 80A 9.0mOhm 56nC Qg | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 80 A | 7.34 mOhms | 56 nC | ||||||||
|
|
651
In-stock
|
Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 9mOhms 56nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 7.34 mOhms | 4 V | 56 nC | |||||
|
|
670
In-stock
|
Infineon Technologies | MOSFET MOSFT 75V 80A 9.0mOhm 56nC Qg | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 7.34 mOhms | 56 nC | ||||||||
|
|
129
In-stock
|
Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 113 mOhms | 3.5 V | 56 nC | Enhancement | CoolMOS | |||
|
|
70
In-stock
|
IXYS | MOSFET 6 Amps 1200V 2.700 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 6 A | 2.6 Ohms | 5 V | 56 nC | Enhancement | ||||
|
|
55
In-stock
|
IXYS | MOSFET 10 Amps 1000V | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.4 Ohms | 6.5 V | 56 nC | Enhancement | Polar, HiPerFET | |||
|
|
237
In-stock
|
IXYS | MOSFET 650V/34A Ultra Junction X2-Class | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 34 A | 105 mOhms | 2.7 V | 56 nC | Enhancement |
