- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,191
In-stock
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STMicroelectronics | MOSFET N-channel 600 V, 0.550 Ohm typ., 7.5 A MDmesh M2 EP Power... | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7.5 A | 550 mOhms | 2 V | 12.4 nC | Enhancement | |||||
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18,008
In-stock
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Nexperia | MOSFET 30V N-channel Trench MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7.2 A | 23 mOhms | 400 mV | 12.4 nC | Enhancement | |||||
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3,587
In-stock
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Infineon Technologies | MOSFET P-Ch -100V 1A SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 1 A | 1 Ohms | - 2 V | 12.4 nC | Enhancement | |||||
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2,929
In-stock
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Siliconix / Vishay | MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 8 A | 0.026 Ohms | 1.5 V | 12.4 nC | Enhancement | TrenchFET | ||||
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3,470
In-stock
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Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | SOT-223-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 5 A | 1.87 Ohms | 2.5 V | 12.4 nC | Enhancement | CoolMOS | ||||
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2,402
In-stock
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Nexperia | MOSFET PMPB29XNE/SOT1220/REEL 7" Q1/T | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5 A | 28 mOhms | 0.65 V | 12.4 nC | Enhancement | ||||||
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15,000
In-stock
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Infineon Technologies | MOSFET CONSUMER | 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 7.6 A | 720 mOhms | 2.5 V | 12.4 nC | Enhancement | CoolMOS | ||||
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VIEW | Infineon Technologies | MOSFET CONSUMER | 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 7.6 A | 720 mOhms | 2.5 V | 12.4 nC | Enhancement | CoolMOS | ||||
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1,490
In-stock
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onsemi | MOSFET NFET U8FL 25V 66A 4.8MOHM | 20 V | SMD/SMT | WDFN-8 | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 66 A | 3.8 mOhms | 1.1 V | 12.4 nC | Enhancement | ||||||
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454
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 5A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 5 A | 800 mOhms | 3 V | 12.4 nC | CoolMOS | |||||
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18
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 5A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 7.6 A | 720 mOhms | 2.5 V | 12.4 nC | Enhancement | CoolMOS |