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- Minimum Operating Temperature :
- Maximum Operating Temperature :
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- 0.0073 Ohms (2)
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- 10.2 mOhms (1)
- 13.6 mOhms (1)
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- 2.1 mOhms (1)
- 20 mOhms (1)
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- 220 mOhms (1)
- 240 mOhms (1)
- 25.8 mOhms (2)
- 270 mOhms (1)
- 279 mOhms (1)
- 3.5 mOhms (1)
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- 4 mOhms (1)
- 4.2 mOhms (2)
- 4.6 mOhms (2)
- 4.8 mOhms (1)
- 6.1 mOhms (1)
- 6.3 mOhms (1)
- 6.5 mOhms (1)
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55 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Forward Transconductance - Min | Rise Time | Fall Time | Package | Factory Pack Quantity | RoHS | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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7,650
In-stock
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Infineon Technologies | MOSFET TRENCH <= 40V | - 20 V, + 20 V | Tape & Reel (TR) | 1 Channel | 83 W | N-Channel | 40 V | 40 A | 2.1 mOhms | 2.3 V | 31 nC | 110 S | 1.6 ns | 4 ns | TSDSON-FL-8 | 5000 | Green available | ||||||||||
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6,000
In-stock
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Siliconix / Vishay | MOSFET N-Channel 30V PowerPAK 1212-8 | + 20 V, - 16 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16 A | 0.0073 Ohms | 1 V | 31 nC | Enhancement | |||||||||||
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GET PRICE |
50,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | OptiMOS | |||||||||
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GET PRICE |
15,988
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 30 A | 25.8 mOhms | 1.2 V | 31 nC | Enhancement | OptiMOS | |||||||||
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3,588
In-stock
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Fairchild Semiconductor | MOSFET PT7 N-ch 80/20V Power Trench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 48 A | 8.5 mOhms | 2 V | 31 nC | PowerTrench Power Clip | |||||||||||
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2,173
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 20 mOhms | 4 V | 31 nC | Enhancement | OptiMOS | ||||||||||
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4,625
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 50A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | OptiMOS | ||||||||||
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50,000
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | OptiMOS | ||||||||||
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3,400
In-stock
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IR / Infineon | MOSFET 1 P-CH -55V HEXFET 105mOhms 31nC | 20 V | Through Hole | TO-220-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 14 A | 170 mOhms | - 1 V | 31 nC | Enhancement | |||||||||||
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2,436
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 5.7A DPAK-2 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 5.7 A | 800 mOhms | 3 V | 31 nC | CoolMOS | |||||||||||
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5,085
In-stock
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IR / Infineon | MOSFET PLANAR_MOSFETS | +/- 20 V | Through Hole | TO-251-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 20 A | 170 mOhms | - 1 V | 31 nC | Enhancement | |||||||||||
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5,686
In-stock
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IR / Infineon | MOSFET 30V 1 P-CH HEXFET 105mOhms 31nC | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 20 A | 170 mOhms | - 1 V | 31 nC | Enhancement | |||||||||||
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2,523
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.1 Ohms | 2.1 V | 31 nC | Enhancement | CoolMOS | ||||||||||
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1,141
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 6.2 A | 680 mOhms | 2.1 V | 31 nC | Enhancement | CoolMOS | ||||||||||
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1,198
In-stock
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Fairchild Semiconductor | MOSFET 25V NChan Dual Cool PowerTrench SyncFET | 20 V | SMD/SMT | DualCool-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 24 A | 3.5 mOhms | 1.7 V | 31 nC | PowerTrench SyncFET | |||||||||||
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703
In-stock
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Fairchild Semiconductor | MOSFET 100V N-CHANNEL POWERTRENCH MOSFET | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 96 A | 7.35 mOhms | 4 V | 31 nC | ||||||||||||||
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913
In-stock
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Fairchild Semiconductor | MOSFET 100V N-CHANNEL POWERTRENCH MOSFET | 20 V | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 40 A | 6.5 mOhms | 4 V | 31 nC | PowerTrench | |||||||||||||
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4,264
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 4.2 mOhms | 1 V | 31 nC | Enhancement | OptiMOS | ||||||||||
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12,101
In-stock
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onsemi | MOSFET NFET TO220FP 600V 6A .98R | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 6 A | 980 mOhms | 3 V | 31 nC | |||||||||||||
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2,667
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET PWR MOSFET 3.8mOhms | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 21 A | 4.8 mOhms | 1.8 V | 31 nC | Enhancement | |||||||||||
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833
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 50A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | OptiMOS | ||||||||||
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220
In-stock
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Fairchild Semiconductor | MOSFET 600V 9A N-Chan FRFET UniFET | 30 V | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 9 A | 650 mOhms | 5 V | 31 nC | UniFET FRFET | |||||||||||||
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46,200
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | |||||||||||
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838
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 4A TO220-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.1 Ohms | 2.1 V | 31 nC | Enhancement | CoolMOS | ||||||||||
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394
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 4A TO220FP-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.1 Ohms | 2.1 V | 31 nC | Enhancement | CoolMOS | ||||||||||
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1,551
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 50 A | 4.6 mOhms | 1 V | 31 nC | Enhancement | OptiMOS | ||||||||||
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101
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 0.198 Ohm 15 A MDmesh M5 | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 15 A | 198 mOhms | 31 nC | |||||||||||||
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14,000
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 0.198 Ohm 15 A MDmesh M5 | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 15 A | 198 mOhms | 31 nC | |||||||||||||
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994
In-stock
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onsemi | MOSFET NFET 600V 6A 980 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.1 A | 980 mOhms | 3.9 V | 31 nC | ||||||||||||
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8,900
In-stock
|
IR / Infineon | MOSFET 30V SINGLE N-CH 4.1mOhms 14nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 90 A | 6.3 mOhms | 1.8 V | 31 nC |
