- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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6,934
In-stock
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Diodes Incorporated | MOSFET 100V P-Ch Enh FET 250mOhm -2.3A | +/- 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 6 A | 300 mOhms | - 3 V | 17.5 nC | Enhancement | ||||
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4,369
In-stock
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Diodes Incorporated | MOSFET 100V P-CH MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 9 A | 240 mOhms | - 3 V | 17.5 nC | Enhancement | ||||
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6,090
In-stock
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onsemi | MOSFET NFET DPAK 30V 41A 8.0 mOhm | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 12.1 A | 8 mOhms | 1.7 V | 17.5 nC | ||||||||
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2,429
In-stock
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Fairchild Semiconductor | MOSFET Snlg PT4, N 20/8V in MLP 2.05x2.05 | 1.5 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 9.4 A | 32.3 mOhms | 600 mV | 17.5 nC | PowerTrench | ||||
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1,343
In-stock
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Diodes Incorporated | MOSFET 100V P-Ch Enh FET 250mOhm -10V -2.3A | +/- 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 2.3 A | 300 mOhms | - 3 V | 17.5 nC | Enhancement | ||||
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3,681
In-stock
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Texas instruments | MOSFET NCh NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 4 mOhms | 1.5 V | 17.5 nC | NexFET | ||||
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1
In-stock
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onsemi | MOSFET NFET DPAK 30V 41A 8.0 mOhm | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 12.1 A | 8 mOhms | 17.5 nC |
