- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
96,142
In-stock
|
IR / Infineon | MOSFET MOSFT 5.0A 29mOhm 30V 2.5V drv capable | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5 A | 29 mOhms | 0.8 V | 6.8 nC | |||||
|
|
2,967
In-stock
|
Infineon Technologies | MOSFET MOSFT 25V 57A 8.7mOhm 6.8nC LogLvl | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 57 A | 10.6 mOhms | 1.9 V | 6.8 nC | |||||
|
|
919
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 4300mOhm Zener | 20 V, 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 1.6 A | 4.3 Ohms | 2.5 V | 6.8 nC | Enhancement | SuperFET II | |||
|
|
2,343
In-stock
|
Diodes Incorporated | MOSFET PMOS-DUAL | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 6.9 A | 45 mOhms | - 2.1 V | 6.8 nC | Enhancement | ||||
|
|
1,658
In-stock
|
Infineon Technologies | MOSFET N-Ch 240V 350mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 4 Ohms | 600 mV | 6.8 nC | Enhancement | ||||
|
|
2,644
In-stock
|
Infineon Technologies | MOSFET N-Ch 240V 350mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 4 Ohms | 600 mV | 6.8 nC | Enhancement | ||||
|
|
2,879
In-stock
|
onsemi | MOSFET DIODES | 20 V | SMD/SMT | SOT-26-6 | Reel | 1 Channel | Si | N-Channel | 60 V | 3.5 A | 132 mOhms | 6.8 nC | ||||||||
|
|
5,515
In-stock
|
onsemi | MOSFET NCH 3.5A 60V 117MOHM CPH6 | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 3.5 A | 92 mOhms | 1.2 V | 6.8 nC | Enhancement | ||||
|
|
5,684
In-stock
|
Nexperia | MOSFET 20 V, P-channel Trench MOSFET | +/- 8 V | SMD/SMT | DFN1010D-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.9 A | 950 mOhms | - 400 mV | 6.8 nC | Enhancement | ||||
|
|
323
In-stock
|
Infineon Technologies | MOSFET | 16 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 700 V | 6 A | 740 mOhms | 2.5 V | 6.8 nC | Enhancement | CoolMOS | |||
|
|
285
In-stock
|
Infineon Technologies | MOSFET | 16 V | Through Hole | TO-251-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 6 A | 740 mOhms | 2.5 V | 6.8 nC | Enhancement | CoolMOS | |||
|
|
8,393
In-stock
|
Texas instruments | MOSFET N-Channel NexFET Pwr MOSFETs | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 4.6 mOhms | 1.1 V | 6.8 nC | NexFET | ||||
|
|
1,080
In-stock
|
Texas instruments | MOSFET DualCool N-Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 5.8 mOhms | 1.1 V | 6.8 nC | NexFET | ||||
|
|
14,982
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2.5 A | 0.13 Ohms | - 2.5 V | 6.8 nC | Enhancement | TrenchFET | |||
|
|
537
In-stock
|
IR / Infineon | MOSFET MOSFT 57A 8.7mOhm 25V 6.8nC Qg log lvl | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 25 V | 57 A | 12.9 mOhms | 6.8 nC | ||||||||
|
|
22
In-stock
|
IR / Infineon | MOSFET 25V 1 N-CH HEXFET 8.7mOhms 6.8nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 25 V | 57 A | 12.9 mOhms | 1.35 V to 2.35 V | 6.8 nC | Enhancement |
