- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,494
In-stock
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IR / Infineon | MOSFET 30V N-CH HEXFET 9.1mOhms 9.3nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 155 C | Tube | 1 Channel | Si | N-Channel | 30 V | 13.6 A | 12.5 mOhms | 1 V | 9.3 nC | Enhancement | ||||
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4,146
In-stock
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Fairchild Semiconductor | MOSFET 30V Single N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | MicroFET-6 | Reel | 1 Channel | Si | N-Channel | 30 V | 9 A | 14 mOhms | 2.1 V | 9.3 nC | PowerTrench | ||||||
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4,295
In-stock
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Infineon Technologies | MOSFET MOSFT DUAL PCh -20V 2.3A | 12 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | P-Channel | - 20 V | - 2.3 A | 250 mOhms | 9.3 nC | ||||||||
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2,469
In-stock
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Infineon Technologies | MOSFET DUAL -20V P-CH HEXFET 7.5mOhms 63nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 20 V | - 2.3 A | 250 mOhms | 9.3 nC | Enhancement | |||||
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3,680
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 5.5A 45mOhm 9.3nC Log Lvl | 16 V | SMD/SMT | SOT-223-4 | Reel | 1 Channel | Si | N-Channel | 30 V | 5.5 A | 70 mOhms | 9.3 nC | ||||||||
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3,980
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 8.5mOhms 9.3nC | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 34 A | 8.5 mOhms | 9.3 nC | StrongIRFET | |||||||
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1,969
In-stock
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IR / Infineon | MOSFET MOSFT 30V 13.6A 9.1mOhm 9.3nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 13.6 A | 9.5 mOhms | 1 V | 9.3 nC | |||||
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737
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 1.8A SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.8 A | 177 mOhms | 2.1 V | 9.3 nC | Enhancement | ||||
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1,700
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 1.8A SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.8 A | 177 mOhms | 2.1 V | 9.3 nC | Enhancement | ||||
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280
In-stock
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IXYS | MOSFET 3.6 Amps 500 V 2 Ohm Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 3.6 A | 2 Ohms | 5.5 V | 9.3 nC | Enhancement | PolarHV | |||
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157
In-stock
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IXYS | MOSFET 3.6 Amps 500 V 2 Ohm Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 3.6 A | 2 Ohms | 5.5 V | 9.3 nC | Enhancement | PolarHV | |||
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9,564
In-stock
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Toshiba | MOSFET U-MOSVIII-H 60V 6A 9.3nC MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 6 A | 69 mOhms | 1.5 V | 9.3 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET 3.6 Amps 500 V 2 Ohm Rds | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 3.6 A | 2 Ohms | 5.5 V | 9.3 nC | Enhancement | PolarHV | |||
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VIEW | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 6.6mOhms 9.3nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 56 A | 9.9 mOhms | 1.35 V to 2.35 V | 9.3 nC | Enhancement | ||||
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699
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 45mOhms 9.3nC | 16 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 5.5 A | 70 mOhms | 1 V to 2.4 V | 9.3 nC | Enhancement | ||||
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96
In-stock
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IR / Infineon | MOSFET MOSFT 20V 60A 8.4mOhm 9.3nC Qg | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 20 V | 60 A | 11.4 mOhms | 9.3 nC |
