- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Applied Filters :
18 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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485
In-stock
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Fairchild Semiconductor | MOSFET N-CH/500V/50A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 48 A | 89 mOhms | 5 V | 105 nC | |||||
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1,906
In-stock
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Vishay Semiconductors | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 0.003 Ohms | 2.5 V | 105 nC | Enhancement | TrenchFET | |||
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496
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 80A TO220-3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 3.6 mOhms | 1.2 V | 105 nC | Enhancement | ||||
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30
In-stock
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IXYS | MOSFET 14 Amps 800V 0.42 Rds | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 13 A | 420 mOhms | 5 V | 105 nC | Enhancement | HyperFET | |||
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20
In-stock
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IXYS | MOSFET 24 Amps 800V 0.4 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 24 A | 400 mOhms | 5 V | 105 nC | Enhancement | PolarHV, HiPerFET | |||
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177
In-stock
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Toshiba | MOSFET N-Ch DTMOSIV 600V 240W 3000pF 30.8A | 30 V | SMD/SMT | DFN8x8-5 | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 87 mOhms | 3 V | 105 nC | Enhancement | |||||
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32
In-stock
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Toshiba | MOSFET N-Ch 30.8A 230W FET 600V 3000pF 86nC | 10 V | Through Hole | TO-3PN-3 | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 88 mOhms | 105 nC | |||||||||
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8
In-stock
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Toshiba | MOSFET MOSFET NChtrr135ns 0.082ohm DTMOS | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 82 mOhms | 3 V to 4.5 V | 105 nC | Enhancement | ||||
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1,200
In-stock
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STMicroelectronics | MOSFET 1200V silicon carbide MOSFET | - 10 V, + 25 V | Through Hole | HiP247-3 | - 55 C | + 200 C | Tube | 1 Channel | SiC | N-Channel | 1.2 kV | 45 A | 80 mOhms | 2.6 V | 105 nC | |||||
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3,000
In-stock
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Siliconix / Vishay | MOSFET N-Ch 40V Vds AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 60 A | 2.45 mOhms | 2.5 V | 105 nC | Enhancement | ||||
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6,000
In-stock
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Siliconix / Vishay | MOSFET N-Channel 80V PowerPAK SO-8 | +/- 20 V | SMD/SMT | PowerPAK-SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 0.0024 Ohms | 2 V | 105 nC | Enhancement | ||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 80A TO220-3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 3.6 mOhms | 1.2 V | 105 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET 64 Amps 250V 0.049 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 64 A | 49 mOhms | 5 V | 105 nC | Enhancement | PolarHT | |||
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VIEW | Siliconix / Vishay | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-Reverse-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 0.003 Ohms | 2.5 V | 105 nC | Enhancement | TrenchFET | |||
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VIEW | Vishay Semiconductors | MOSFET 40V 50A 150W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 0.003 Ohms | 2.5 V | 105 nC | Enhancement | TrenchFET | |||
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VIEW | STMicroelectronics | MOSFET N-Ch 620V 0.34 Ohm 15A SuperMESH 3 2 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 15.5 A | 280 mOhms | 105 nC | Enhancement | |||||
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4,069
In-stock
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IR / Infineon | MOSFET MOSFET N-CH 20V 211A DIRECTFET | 12 V | SMD/SMT | DirectFET-MD | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 211 A | 500 uOhms | 0.8 V | 105 nC | Directfet | ||||
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8
In-stock
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STMicroelectronics | MOSFET N-Ch 950V 0.32 Ohm 22A SuperMESH 3 | Through Hole | TO-247-3 | Tube | Si | N-Channel | 950 V | 22 A | 360 mOhms | 105 nC |
