- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
29 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,975
In-stock
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STMicroelectronics | MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 28 A | 110 mOhms | 4 V | 54 nC | Enhancement | ||||
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4,601
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench | 20 V | SMD/SMT | Power-33-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 20 A | 2.6 mOhms | 1.7 V | 54 nC | PowerTrench | ||||||
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770
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 600V, 130mohm | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 28 A | 130 mOhms | 3.5 V | 54 nC | SuperFET II | ||||
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539
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 28 A | 110 mOhms | 3 V | 54 nC | Enhancement | |||||
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2,216
In-stock
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IR / Infineon | MOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 61 A | 13.9 mOhms | 4 V | 54 nC | Enhancement | StrongIRFET | |||||
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1,969
In-stock
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STMicroelectronics | MOSFET N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MO... | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 28 A | 110 mOhms | 3 V | 54 nC | Enhancement | ||||
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615
In-stock
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STMicroelectronics | MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 28 A | 110 mOhms | 4 V | 54 nC | Enhancement | ||||
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435
In-stock
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Fairchild Semiconductor | MOSFET N-Channel PwrTrench 100V 164A 4.5mOhm | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 3.8 mOhms | 4 V | 54 nC | Enhancement | ||||
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2,000
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 150 A | 2.5 mOhms | 1.35 V | 54 nC | Enhancement | StrongIRFET | |||
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377
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 64A 14mOhm 54nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 64 A | 14 mOhms | 54 nC | ||||||||
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156
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 600V, 130mohm | 20 V, 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 28 A | 130 mOhms | 3.5 V | 54 nC | Enhancement | SuperFET II | |||
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555
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 150 A | 2.5 mOhms | 1.35 V | 54 nC | Enhancement | StrongIRFET | |||
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215
In-stock
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STMicroelectronics | MOSFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 28 A | 110 mOhms | 3 V | 54 nC | Enhancement | ||||
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294
In-stock
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IR / Infineon | MOSFET Automotive MOSFET 55 54 nC Qg, TO-220 | Through Hole | TO-220-3 | Tube | Si | N-Channel | 55 V | 69 A | 11 mOhms | 54 nC | ||||||||||
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96
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 28 A | 110 mOhms | 3 V | 54 nC | Enhancement | |||||
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980
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -70A D2PAK-2 OptiMOS-P2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 70 A | 9.1 mOhms | 54 nC | OptiMOS | |||||
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2
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 14mOhms 54nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 64 A | 14 mOhms | 2 V to 4 V | 54 nC | Enhancement | ||||
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80
In-stock
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Infineon Technologies | MOSFET MOSFET, 100V, 30A, 1 TO-220 Fullpack | 20 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 100 V | 35 A | 10.7 mOhms | 4 V | 54 nC | ||||||||
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130
In-stock
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Infineon Technologies | MOSFET 20V Dual N-Channel HEXFET | 12 V | SMD/SMT | DirectFET-SA | - 40 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 15 A | 3.8 mOhms | 0.8 V | 54 nC | |||||
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21
In-stock
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IXYS | MOSFET 650v/32A Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 32 A | 135 mOhms | 3 V | 54 nC | Enhancement | ||||
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27
In-stock
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IXYS | MOSFET 650V/9A Power MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 32 A | 135 mOhms | 3 V | 54 nC | Enhancement | ||||
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48
In-stock
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IXYS | MOSFET 650V/9A Power MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 14 A | 135 mOhms | 3 V | 54 nC | Enhancement | ||||
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27
In-stock
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IXYS | MOSFET 650V/9A Power MOSFET | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 32 A | 135 mOhms | 3 V | 54 nC | Enhancement | ||||
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2,458
In-stock
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Texas instruments | MOSFET 30V N-Channel NexFET Power MOSFET 8-VSONP -55 to... | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 2.9 mOhms | 1 V | 54 nC | Enhancement | ||||
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GET PRICE |
21,750
In-stock
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Texas instruments | MOSFET 30V N-Channel NexFET Power MOSFET 8-VSONP -55 to... | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 3.2 mOhms | 1 V | 54 nC | Enhancement | |||
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497
In-stock
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Texas instruments | MOSFET 30V, N-Ch NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 2.9 mOhms | 1 V | 54 nC | Enhancement | NexFET | |||
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6,000
In-stock
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Infineon Technologies | MOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 13.9 mOhms | 3 V | 54 nC | Enhancement | StrongIRFET | ||||||
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750
In-stock
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Texas instruments | MOSFET 30V N-Channel NexFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 3.2 mOhms | 1 V | 54 nC | Enhancement | NexFET | |||
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63
In-stock
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IR / Infineon | MOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 63 A | 11.1 mOhms | 2 V to 4 V | 54 nC | Enhancement | StrongIRFET |
