- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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980
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.5 Ohms | 3 V | 5 nC | Enhancement | ||||
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2,359
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.5 Ohms | 3 V | 5 nC | Enhancement | ||||
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964
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.5 Ohms | 3 V | 5 nC | Enhancement | ||||
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985
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.5 Ohms | 3 V | 5 nC | Enhancement | ||||
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1,811
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 4.8 A | 45 mOhms | 3 V | 5 nC | PowerTrench | ||||||
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4,878
In-stock
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Nexperia | MOSFET 20V P-channel Trench MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 77 mOhms | - 900 mV | 5 nC | Enhancement | ||||
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2,388
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET 80mOhm -12V -3.3A | - 6 V | SMD/SMT | U-WLB1010-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3.3 A | 65 mOhms | - 1 V | 5 nC | Enhancement | ||||
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764
In-stock
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Texas instruments | MOSFET 12V N-Channel NexFET Power MOSFET 3-PICOSTAR ... | 8 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 7.1 A | 15 mOhms | 500 mV | 5 nC | Enhancement | ||||
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750
In-stock
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Texas instruments | MOSFET 12V N-Channel NexFET Power MOSFET 3-PICOSTAR ... | 8 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 7.1 A | 15 mOhms | 500 mV | 5 nC | Enhancement | ||||
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21,870
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch ENH Mode 120mOhm 10VGS 3.3A | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.3 A | 120 mOhms | 1 V | 5 nC | Enhancement | ||||
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957
In-stock
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onsemi | MOSFET TRENCH 6 60V NFET | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 25 A | 18 mOhms | 1.2 V | 5 nC | Enhancement | ||||
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2,995
In-stock
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onsemi | MOSFET PCH 4V Power MOSFET | +/- 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.5 A | 199 mOhms | - 2.6 V | 5 nC | Enhancement |
