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13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,070
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 4 A | 1.35 Ohms | 3 V | 9.8 nC | MDmesh | |||||
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913
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 4 A | 1.35 Ohms | 3 V | 9.8 nC | MDmesh | |||||
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2,075
In-stock
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onsemi | MOSFET NCH 100V 9A TP-FA(DPAK) | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 9 A | 180 mOhms | 1.5 V | 9.8 nC | Enhancement | |||||
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50
In-stock
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IXYS | MOSFET 3 Amps 600V 2.9 Ohms Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3 A | 2.9 Ohms | 5.5 V | 9.8 nC | Enhancement | PolarHV | ||||
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138
In-stock
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IXYS | MOSFET 3 Amps 600V | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3 A | 2.9 Ohms | 5.5 V | 9.8 nC | Enhancement | PolarHV | ||||
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177
In-stock
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IXYS | MOSFET 3 Amps 600V 3 Rds | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3 A | 2.9 Ohms | 5.5 V | 9.8 nC | Enhancement | PolarHV | ||||
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4,330
In-stock
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Toshiba | MOSFET P-Ch SSM -5A -20V 12V VGSS 0.035Ohm | 12 V | SMD/SMT | WCSP6C-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 5 A | 26 mOhms | - 1.2 V | 9.8 nC | ||||||
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4,882
In-stock
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Toshiba | MOSFET N-Ch DTMOS VII-H 24W 630pF 38A 30V | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 38 A | 10.2 mOhms | 2.3 V | 9.8 nC | Enhancement | |||||
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2,098
In-stock
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Toshiba | MOSFET N-Ch DTMOS VII-H 1.9W 630pF 15A 30V | 20 V | SMD/SMT | SOP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 15 A | 10.4 mOhms | 2.3 V | 9.8 nC | Enhancement | |||||
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865,200
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 4 A | 1.35 Ohms | 3 V | 9.8 nC | MDmesh | |||||
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1,878
In-stock
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Toshiba | MOSFET N-Ch DTMOS VII-H 22W 630pF 37A 30V | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 37 A | 10.2 mOhms | 2.3 V | 9.8 nC | Enhancement | |||||
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915
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 4 A | 1.35 Ohms | 3 V | 9.8 nC | MDmesh | |||||
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1,664
In-stock
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onsemi | MOSFET NCH 100V 9A TP(IPAK) | 20 V | Through Hole | TO-251-3 | + 150 C | Bulk | 1 Channel | Si | N-Channel | 100 V | 9 A | 180 mOhms | 1.5 V | 9.8 nC | Enhancement |