- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
19 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,366
In-stock
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onsemi | MOSFET T8 60V LOW COSS | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 250 A | 1.1 mOhms | 1.2 V | 89 nC | Enhancement | ||||
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100
In-stock
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STMicroelectronics | MOSFET N-channel 900 V, 0.110 Ohm typ., 38 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 40 A | 88 mOhms | 3 V | 89 nC | Enhancement | |||||
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82
In-stock
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STMicroelectronics | MOSFET N-channel 900 V, 0.110 Ohm typ., 38 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 40 A | 88 mOhms | 3 V | 89 nC | Enhancement | |||||
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750
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 214 A | 3 mOhms | 4 V | 89 nC | PowerTrench | ||||||
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GET PRICE |
13,610
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 64A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 64 A | 17.5 mOhms | 2 V | 89 nC | Enhancement | |||
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39,600
In-stock
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Infineon Technologies | MOSFET 40V 90A 2.5mOhm 89nC StrongIRFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 2.4 mOhms | 2.2 V to 3.9 V | 89 nC | Enhancement | StrongIRFET | |||
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2,191
In-stock
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IR / Infineon | MOSFET MOSFT 40V 119A 5.5mOhm 59nC Qg | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 119 A | 5.5 mOhms | 4 V | 89 nC | |||||||
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2,247
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 16mOhms 59.3nC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 64 A | 16 mOhms | 4 V | 89 nC | Enhancement | ||||
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4,084
In-stock
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IR / Infineon | MOSFET 75V 1 N-CH HEXFET 12.6mOhms 89nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 62 A | 12.6 mOhms | 4 V | 89 nC | Enhancement | ||||
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910
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 64A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 64 A | 17.5 mOhms | 2 V | 89 nC | Enhancement | ||||
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1,500
In-stock
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onsemi | MOSFET T8 40V LOW COSS | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 270 A | 1.6 mOhms | 1.2 V | 89 nC | Enhancement | ||||
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398
In-stock
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Fairchild Semiconductor | MOSFET PT5 NCH 100V 3.6Mohm PowerTrench MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 176 A | 3.6 mOhms | 3 V | 89 nC | PowerTrench | ||||
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771
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -85A DPAK-2 OptiMOS-P2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 85 A | 5.3 mOhms | - 4 V | 89 nC | Enhancement | OptiMOS | |||
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438
In-stock
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Infineon Technologies | MOSFET 75V 80A 12.6mOhm Automotive MOSFET | Through Hole | TO-220-3 | + 175 C | Tube | Si | N-Channel | 75 V | 80 A | 12.6 mOhms | 89 nC | |||||||||
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11
In-stock
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STMicroelectronics | MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1200 V | 14 A | 900 mOhms | 3 V to 5 V | 89 nC | Enhancement | |||||
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15
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -85A DPAK-2 OptiMOS-P2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 85 A | 5.3 mOhms | - 4 V | 89 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 12.6mOhms 89nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 12.6 mOhms | 89 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 7.9mOhms | 20 V | SMD/SMT | DirectFET-L6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 156 A | 7.9 mOhms | 89 nC | Enhancement | |||||
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1,779
In-stock
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IR / Infineon | MOSFET MOSFT PCh -20V A mOhm 59nC | SMD/SMT | TSSOP-8 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 8.6 A | 15 mOhms | - 1.2 V | 89 nC |
