- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
40 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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5,768
In-stock
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IR / Infineon | MOSFET MOSFT PCh -20V -6.7A 40mOhm 33.3nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6.7 A | 40 mOhms | - 0.7 V | 50 nC | |||||
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8,888
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 6.2 mOhms | 2 V | 50 nC | Enhancement | OptiMOS | |||
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2,073
In-stock
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IXYS | MOSFET -10.0 Amps -500V 1.000 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 10 A | 1 Ohms | - 4 V | 50 nC | Enhancement | PolarP | |||
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11,755
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 90A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 4.8 mOhms | 50 nC | Enhancement | OptiMOS | ||||
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608
In-stock
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STMicroelectronics | MOSFET N-Ch 500V 0.135 21A MDmesh II | 25 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 21 A | 158 mOhms | 4 V | 50 nC | ||||||
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894
In-stock
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STMicroelectronics | MOSFET N-Ch 500V 0.135 Ohm MDmesh II Power MO | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 21 A | 158 mOhms | 50 nC | Enhancement | |||||
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6,488
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 6.2 mOhms | 2 V | 50 nC | Enhancement | OptiMOS | |||
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772
In-stock
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STMicroelectronics | MOSFET N-Ch 500V 0.135 21A MDmesh II | 25 V | SMD/SMT | TO-263-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 21 A | 158 mOhms | 4 V | 50 nC | ||||||
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3,077
In-stock
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IR / Infineon | MOSFET MOSFT 30V 161A 3.3mOhm 34nC Log Lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 161 A | 3.3 mOhms | 2.3 V | 50 nC | |||||||
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3,403
In-stock
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onsemi | MOSFET NFET SO8FL 40V 126A 2.8MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 130 A | 2 mOhms | 1.2 V | 50 nC | Enhancement | ||||
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2,543
In-stock
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onsemi | MOSFET NFET SO8FL 40V 126A 2.8MO | 20 V | SMD/SMT | SO-FL-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 130 A | 2 mOhms | 1.2 V | 50 nC | Enhancement | |||||
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3,990
In-stock
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IR / Infineon | MOSFET MOSFET N-CH 30V 100A PQFN | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.3 mOhms | 2.35 V | 50 nC | |||||||
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2,033
In-stock
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onsemi | MOSFET T6-40V N 2 MOHMS LL | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 150 A | 3 mOhms | 1.2 V | 50 nC | Enhancement | ||||
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686
In-stock
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Fairchild Semiconductor | MOSFET MOSFET UNIFET1 500V ,20A | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 20 A | 260 mOhms | 5 V | 50 nC | Enhancement | UniFET | |||
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517
In-stock
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STMicroelectronics | MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10 A | 750 mOhms | 50 nC | Enhancement | |||||
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1,970
In-stock
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Vishay Semiconductors | MOSFET 60V 25A 62W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 25 A | 0.018 Ohms | 1.5 V | 50 nC | Enhancement | TrenchFET | |||
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1,738
In-stock
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IR / Infineon | MOSFET MOSFT 75V 53A 16mOhm 50nC Qg | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 53 A | 16 mOhms | 50 nC | ||||||||
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498
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 4.2 mOhms | 1.2 V | 50 nC | Enhancement | OptiMOS | |||
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114
In-stock
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IXYS | MOSFET -10.0 Amps -500V 1.000 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 10 A | 1 Ohms | - 4 V | 50 nC | Enhancement | ||||
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150
In-stock
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IXYS | MOSFET 22 Amps 500V 0.27 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 22 A | 270 mOhms | 5.5 V | 50 nC | Enhancement | PolarHV | |||
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1,064
In-stock
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onsemi | MOSFET NFET SO8FL 40V 150A 2MOHM | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 150 A | 3 mOhms | 1.2 V | 50 nC | Enhancement | ||||
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355
In-stock
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Siliconix / Vishay | MOSFET N-Chnl 60-V (D-S) AEC-Q101 Qualified | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 60 V | 56 A | 0.012 Ohms | 2.5 V | 50 nC | Enhancement | TrenchFET | ||||
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30
In-stock
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IXYS | MOSFET 600V 28A 0.26Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 28 A | 260 mOhms | 5 V | 50 nC | HyperFET | ||||||
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43
In-stock
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IXYS | MOSFET 600V 28A 0.26Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-3P-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 28 A | 260 mOhms | 5 V | 50 nC | HyperFET | ||||||
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3,000
In-stock
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Toshiba | MOSFET N-Ch 30V 2940pF 50nC 134A 90W | 20 V | SMD/SMT | SOP-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 134 A | 2.2 mOhms | 1.1 V | 50 nC | Enhancement | |||||
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910
In-stock
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STMicroelectronics | MOSFET N-channel 650 V 0.175 17A MDmesh | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 17 A | 150 mOhms | 50 nC | ||||||
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25
In-stock
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IXYS | MOSFET PHASE LEG MOSFET MOD HALF-BRIDGE 500V 1... | 30 V | Through Hole | ISOPLUS-i4-PAK-5 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 500 V | 13 A | 270 mOhms | 5 V | 50 nC | PolarHV | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 60V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 4.2 mOhms | 1.2 V | 50 nC | Enhancement | OptiMOS | |||
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673
In-stock
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Vishay Semiconductors | MOSFET 60V 60A 100W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 56 A | 0.012 Ohms | 2.5 V | 50 nC | Enhancement | TrenchFET | |||
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VIEW | Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 18 A | 0.009 Ohms | - 2.5 V | 50 nC | Enhancement | TrenchFET |
