- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
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- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
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- 0.0078 Ohms (1)
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- 2.1 mOhms (2)
- 2.2 mOhms (2)
- 215 mOhms (1)
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- 250 mOhms (7)
- 280 mOhms (3)
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- 5.7 mOhms (1)
- 6 mOhms (1)
- 6.5 mOhms (1)
- 610 mOhms (1)
- 7.7 mOhms (2)
- 7.8 mOhms (2)
- 84 mOhms (10)
- 88 mOhms (2)
- 9 mOhms (5)
- 9.5 mOhms (3)
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64 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Qualification | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Rise Time | Package | Factory Pack Quantity | RoHS | |
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GET PRICE |
8,650
In-stock
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STMicroelectronics | MOSFET Automotive-grade N-channel 100 V, 0.008 Ohm typ 16 A STripF... | - 20 V, + 20 V | Tape & Reel (TR) | AEC-Q101 | 1 Channel | 5 W | N-Channel | 100 V | 16 A | 9.5 mOhms | 2.5 V | 45 nC | 32 ns | PowerFLAT-5x6-8 | 3000 | Green available | |||||||||
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67,313
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 7.8 mOhms | 1.2 V | 45 nC | Enhancement | OptiMOS | |||||||||
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32,671
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 7.7 mOhms | 1.2 V | 45 nC | Enhancement | OptiMOS | |||||||||
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3,451
In-stock
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STMicroelectronics | MOSFET N-Ch 500V 0.162 Ohm 17A MDmesh II PWR | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 17 A | 190 mOhms | 45 nC | Enhancement | |||||||||||
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2,938
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Chnl Pwr Trench MOSFET | 20 V | SMD/SMT | Power-33-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 13.5 A | 6.5 mOhms | 1.7 V | 45 nC | |||||||||||||
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827
In-stock
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Fairchild Semiconductor | MOSFET PT5 150V/20V Nch PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 45 A | 9.5 mOhms | 2 V | 45 nC | Enhancement | PowerTrench Power Clip | |||||||||
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2,719
In-stock
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Fairchild Semiconductor | MOSFET PT5 120/20V Nch Power Trench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 120 V | 64 A | 6 mOhms | 2 V | 45 nC | Enhancement | PowerTrench Power Clip | |||||||||
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404
In-stock
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STMicroelectronics | MOSFET 1200V silicon carbide MOSFET | - 10 V, + 25 V | Through Hole | HiP247-3 | - 55 C | + 200 C | Tube | 1 Channel | SiC | N-Channel | 1.2 kV | 20 A | 215 mOhms | 2 V | 45 nC | Enhancement | ||||||||||
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528
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 24 A | 84 mOhms | 3 V | 45 nC | Enhancement | CoolMOS | |||||||||
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4,150
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 7.7 mOhms | 1.2 V | 45 nC | Enhancement | OptiMOS | |||||||||
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2,443
In-stock
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IR / Infineon | MOSFET MOSFT 40V 77A 9mOhm 30nC Qg | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 77 A | 9 mOhms | 4 V | 45 nC | |||||||||||||
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163
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 16.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 16.1 A | 230 mOhms | 2.5 V | 45 nC | Enhancement | CoolMOS | |||||||||
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627
In-stock
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Fairchild Semiconductor | MOSFET 250V, 0.11OHM, 25.5A, N-CH MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 25.5 A | 108 mOhms | 4.1 V | 45 nC | UltraFET | ||||||||||
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566
In-stock
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Fairchild Semiconductor | MOSFET CCI MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 120 V | 40 A | 10.9 mOhms | 3.1 V | 45 nC | PowerTrench Power Clip | ||||||||||
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412
In-stock
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Fairchild Semiconductor | MOSFET SUPREMOS 22A-TO247 | 30 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 140 mOhms | 4 V | 45 nC | SupreMOS | |||||||||||
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784
In-stock
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Fairchild Semiconductor | MOSFET 500V 10A N-Channel | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 10 A | 610 mOhms | 45 nC | Enhancement | |||||||||||
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740
In-stock
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Infineon Technologies | MOSFET N-Ch 550V 17A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 17 A | 180 mOhms | 2.5 V | 45 nC | Enhancement | CoolMOS | |||||||||
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5,044
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 9 mOhms | - 3.1 V | 45 nC | Enhancement | OptiMOS | |||||||||
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1,949
In-stock
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onsemi | MOSFET NFET 40V SPCL TR | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 70 A | 13.2 mOhms | 3.5 V | 45 nC | |||||||||||
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5,210
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 380 mOhms | 3 V | 45 nC | CoolMOS | ||||||||||
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395
In-stock
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Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 12 A | 84 mOhms | 3 V | 45 nC | Enhancement | CoolMOS | |||||||||
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1,944
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 7.8 mOhms | 1.2 V | 45 nC | Enhancement | OptiMOS | |||||||||
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714
In-stock
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Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.1 mOhms | 1.2 V | 45 nC | Enhancement | ||||||||||
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147
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 11A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 380 mOhms | 3 V | 45 nC | CoolMOS | ||||||||||
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1,156
In-stock
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Infineon Technologies | MOSFET MOSFT 150V 24A 95mOhm 30nC | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 24 A | 95 mOhms | 5 V | 45 nC | |||||||||||||
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364
In-stock
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STMicroelectronics | MOSFET Automotive-grade N-channel 100 V, 0.0085 Ohm typ., 70 A STri... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 70 A | 10 mOhms | 2.5 V | 45 nC | Enhancement | ||||||||||
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233
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 100A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 24 A | 84 mOhms | 3 V | 45 nC | Enhancement | CoolMOS | |||||||||
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423
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 13.8A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13.8 A | 250 mOhms | 2.5 V | 45 nC | Enhancement | CoolMOS | |||||||||
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370
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 13.8A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13.8 A | 250 mOhms | 2.5 V | 45 nC | Enhancement | CoolMOS | |||||||||
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141
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 9.5 mOhms | 4.5 V | 45 nC | Enhancement |
