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Vgs - Gate-Source Voltage :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
STP33N65M2
1+
$3.100
10+
$2.630
100+
$2.280
250+
$2.170
RFQ
994
In-stock
STMicroelectronics MOSFET POWER MOSFET 25 V Through Hole TO-220-3   + 150 C Tube 1 Channel Si N-Channel 650 V 24 A 117 mOhms 2 V 41.5 nC Enhancement  
STB33N65M2
1+
$2.920
10+
$2.480
100+
$2.150
250+
$2.040
1000+
$1.540
RFQ
899
In-stock
STMicroelectronics MOSFET POWER MOSFET 25 V SMD/SMT TO-263-3   + 150 C Reel 1 Channel Si N-Channel 650 V 24 A 117 mOhms 2 V 41.5 nC Enhancement  
STF33N65M2
1+
$3.170
10+
$2.690
100+
$2.330
250+
$2.210
RFQ
390
In-stock
STMicroelectronics MOSFET POWER MOSFET 25 V Through Hole TO-220FP-3   + 150 C Tube 1 Channel Si N-Channel 650 V 24 A 117 mOhms 2 V 41.5 nC Enhancement  
SPP11N60S5XKSA1
500+
$1.790
1000+
$1.510
2500+
$1.440
5000+
$1.380
VIEW
RFQ
Infineon Technologies MOSFET N-Ch 600V 11A TO220-3 20 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 11 A 380 mOhms 4.5 V 41.5 nC   CoolMOS
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