- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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3,000
In-stock
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Siliconix / Vishay | MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 0.78 A, 0.78 A | 0.2 Ohms, 0.2 Ohms | 0.6 V, 0.6 V | 1.2 nC, 1.2 nC | Enhancement | |||
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540
In-stock
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Toshiba | MOSFET Small Signal MOSFET | +/- 8 V, +/- 8 V | SMD/SMT | ES6-6 | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 330 mA, - 330 mA | 3.6 Ohms, 3.6 Ohms | - 300 mV, - 300 mV | 1.2 nC, 1.2 nC | Enhancement |
